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一种基于自发形成的聚吡咯修饰氧化石墨烯膜的离子二极管。

An ionic diode based on a spontaneously formed polypyrrole-modified graphene oxide membrane.

作者信息

Luo Rifeng, Xiao Tianliang, Li Wenping, Liu Zhaoyue, Wang Yao

机构信息

Key Laboratory of Bio-Inspired Smart Interfacial Science and Technology of Ministry of Education, School of Chemistry, Beihang University Beijing 100191 P. R. China

Key Laboratory of Micro-Nano Measurement-Manipulation and Physics (Ministry of Education), School of Physics, Beihang University Beijing 100191 P. R. China

出版信息

RSC Adv. 2020 May 1;10(29):17079-17084. doi: 10.1039/d0ra01145b. eCollection 2020 Apr 29.

Abstract

Asymmetric membranes derived from the stacking of graphene oxide (GO) nanosheets have attracted great attention for the fabrication of ionic diodes. Herein, we described an ionic diode based on a polypyrrole-modified GO membrane with a vertical asymmetry, which was achieved by a spontaneous oxidation polymerization of pyrrole monomers on one side of the GO membrane in vapor phase. This asymmetric modification resulted in an asymmetric geometry due to the occupation of the interlayer space of one side of the GO membrane by polypyrrole. Our ionic diode demonstrated an obvious ionic rectification behavior over a wide voltage range. A calculation based on Poisson-Nernst-Planck equations was used to theoretically investigate the role of asymmetric modification of polypyrrole.

摘要

由氧化石墨烯(GO)纳米片堆叠而成的不对称膜在离子二极管的制备方面引起了极大关注。在此,我们描述了一种基于具有垂直不对称性的聚吡咯修饰GO膜的离子二极管,其通过吡咯单体在气相中于GO膜一侧的自发氧化聚合实现。这种不对称修饰由于聚吡咯占据了GO膜一侧的层间空间而导致不对称几何形状。我们的离子二极管在很宽的电压范围内表现出明显的离子整流行为。基于泊松-能斯特-普朗克方程的计算被用于从理论上研究聚吡咯不对称修饰的作用。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f287/9053440/8677e870f500/d0ra01145b-f1.jpg

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