Niu Jinan, Domenech-Carbó Antonio, Primo Ana, Garcia Hermenegildo
Instituto de Tecnologia Quimica CSIC-UPV, Universitat Politecnica de Valencia Valencia 46022 Spain
School of Materials Science and Engineering, China University of Mining and Technology Xuzhou 221116 P. R. China
RSC Adv. 2018 Dec 21;9(1):99-106. doi: 10.1039/c8ra08745h. eCollection 2018 Dec 19.
Structuring of graphene as graphene sponges in the submicrometric scale has been achieved by using silica spheres (80 nm diameter) as hard templates and chitosan or alginate as precursor of defective N-doped or undoped graphene, respectively. The resulting defective N-doped graphene sponge exhibits a remarkable activity and stability for hydrogen evolution reaction with onset at 203 mV for a current density of 0.5 mA cm with a small Tafel plot slope of 69.7 mV dec. In addition, the graphene sponge also exhibits a high double layer capacitance of 11.65 mF cm. Comparison with an analogous N-doped graphene sample shows that this electrochemical properties derive from the spatial structuring and large surface area.
通过使用直径80纳米的二氧化硅球体作为硬模板,并分别以壳聚糖或海藻酸盐作为有缺陷的氮掺杂或未掺杂石墨烯的前驱体,已实现了亚微米尺度的石墨烯海绵状结构构建。所得的有缺陷的氮掺杂石墨烯海绵在析氢反应中表现出显著的活性和稳定性,在电流密度为0.5 mA/cm²时起始电位为203 mV,塔菲尔斜率较小,为69.7 mV/dec。此外,该石墨烯海绵还具有11.65 mF/cm²的高双层电容。与类似的氮掺杂石墨烯样品相比表明,这种电化学性质源于空间结构和大表面积。