Li Min, Luo Yong, Hu Xiaojuan, Han Zhongkang, Liu Xianglian, Cui Jiaolin
School of Materials and Chemical Engineering, Ningbo University of Technology Ningbo 315016 China
Materials Science and Engineering College, China University of Mining and Technology Xuzhou 221116 China
RSC Adv. 2019 Oct 7;9(54):31747-31752. doi: 10.1039/c9ra06565b. eCollection 2019 Oct 1.
Copper vacancy concentration ( ) in ternary Cu-In-Te chalcogenides is an important factor to engineer carrier concentration ( ) and thermoelectric performance. However, it is not sufficient to regulate the phonon scattering in the CuInTe-based chalcogenides. In this work we manipulate the value and point defects simultaneously through addition of Cu along with Ga substitution for In in CuInTe, and thereby increase the carrier concentration and reduce the lattice thermal conductivity. This strategy finally enables us to achieve ∼60% enhancement of the TE figure of merit () at = 0.078 compared with the pristine CuInTe. It is also used as guidance to achieve the high TE performance of the ternary chalcogenides.
三元铜铟碲硫属化物中的铜空位浓度（ ）是调控载流子浓度（ ）和热电性能的一个重要因素。然而，在基于铜铟碲的硫属化物中，仅靠它来调节声子散射是不够的。在这项工作中，我们通过在铜铟碲中添加铜并同时用镓替代铟来同时操控 值和点缺陷，从而提高载流子浓度并降低晶格热导率。该策略最终使我们在 = 0.078时实现了与原始铜铟碲相比约60%的热电优值（ ）增强。它还可作为实现三元硫属化物高热电性能的指导。
