Kosuga Atsuko, Umekage Kouhei, Matsuzawa Mie, Sakamoto Yasuhiro, Yamada Ikuya
Nanoscience and Nanotechnology Research Center, Research Organization for the 21st Century, Osaka Prefecture University , Gakuencho 1-2, Sakai 599-8570, Japan.
Inorg Chem. 2014 Jul 7;53(13):6844-9. doi: 10.1021/ic500688d. Epub 2014 Jun 10.
A room-temperature high-pressure synthesis method is proposed as an alternative way to induce nanoscale structural disorder in the bulk thermoelectric CuInTe2 matrix. This disorder stems from the coexistence of distinct domains with different degrees and geometries of disorder at Cu/In cation sites. The lattice thermal conductivity of high-pressure-treated CuInTe2 is substantially less than that of hot-pressed CuInTe2. The Debye-Callaway model reveals that the reduced lattice thermal conductivity is mainly attributed to disorder at the Cu/In cation sites and stacking faults, which were probably created during formation of the high-pressure-treated phases. This study demonstrates that room-temperature high-pressure synthesis can produce a radical change in the crystal structure and physical properties of conventional thermoelectric materials.
提出了一种室温高压合成方法，作为在块状热电CuInTe2基体中引入纳米级结构无序的替代方法。这种无序源于Cu/In阳离子位点处具有不同程度和几何形状无序的不同畴的共存。高压处理的CuInTe2的晶格热导率显著低于热压CuInTe2的晶格热导率。德拜-卡拉韦模型表明，晶格热导率的降低主要归因于Cu/In阳离子位点处的无序和堆垛层错，这些可能是在高压处理相形成过程中产生的。这项研究表明，室温高压合成可以使传统热电材料的晶体结构和物理性质发生根本性变化。
