Vijayamohanan Harikrishnan, Kenath Gopal S, Palermo Edmund F, Ullal Chaitanya K
Department of Materials Science and Engineering, Rensselaer Polytechnic Institute Troy NY 12180 USA
RSC Adv. 2019 Sep 13;9(49):28841-28850. doi: 10.1039/c9ra05864h. eCollection 2019 Sep 9.
Highly parallelized optical super-resolution lithography techniques are key for realizing bulk volume nanopatterning in materials. The majority of demonstrated STED-inspired lithography schemes are serial writing techniques. Here we use a recently developed model spirothiopyran monolayer photoresist to study the non-equilibrium kinetics of STED-inspired lithography systems to achieve large area interference lithography with super-resolved feature dimensions. The linewidth is predicted to increase with exposure time and the contrast is predicted to go through a maximum, resulting in a narrow window of optimum exposure. Experimental results are found to match with high quantitative accuracy. The low photoinhibition saturation threshold of the spirothiopyran renders it especially conducive for parallelized large area nanopatterning. Lines with 56 and 92 nm FWHM were obtained using serial and parallel patterning, respectively. Functionalization of surfaces with heterobifunctional PEGs enables diverse patterning of any desired chemical functionality on these monolayers. These results provide important insight prior to realizing a highly parallelized volume nanofabrication technique.
高度并行化的光学超分辨率光刻技术是在材料中实现体体积纳米图案化的关键。大多数已证明的受受激发射损耗（STED）启发的光刻方案都是串行写入技术。在这里，我们使用最近开发的模型螺吡喃单层光刻胶来研究受STED启发的光刻系统的非平衡动力学，以实现具有超分辨特征尺寸的大面积干涉光刻。预计线宽会随着曝光时间增加，并且对比度预计会经历一个最大值，从而导致最佳曝光的狭窄窗口。实验结果被发现具有很高的定量准确性。螺吡喃的低光抑制饱和阈值使其特别有利于并行化大面积纳米图案化。分别使用串行和并行图案化获得了半高宽为56和92 nm的线条。用异双功能聚乙二醇对表面进行功能化能够在这些单层上对任何所需化学功能进行多样化图案化。这些结果为实现高度并行化的体纳米制造技术提供了重要的见解。
