一种混合式YSZ/SnO/MEMS SO气体传感器。

A hybrid YSZ/SnO/MEMS SO gas sensor.

作者信息

Hsueh Ting-Jen, Lu Chun-Liang

机构信息

Department of Electronic Engineering, National Kaohsiung University of Science and Technology Kaohsiung 807 Taiwan

Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University Tainan 701 Taiwan.

出版信息

RSC Adv. 2019 Sep 4;9(48):27800-27806. doi: 10.1039/c9ra03607e. eCollection 2019 Sep 3.

DOI:10.1039/c9ra03607e

PMID:35530490

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC9070785/

Abstract

This study uses a solid YSZ electrolyte film in a SnO MEMS SO gas sensor of the semiconductor type to enhance the redox reaction. The YSZ film is prepared by RF sputtering. XRD analysis shows the presence of the (111), (200), (220) and (311) peaks that denote the crystallization planes of YSZ. The experimental results show that the SnO MEMS SO gas sensor with a YSZ film has a better sensor response than a pure SnO MEMS SO gas sensor or a YSZ MEMS SO gas sensor when the SO concentration and the sensor's temperature sensors are 250 ppb and 400 °C, respectively. The YSZ/SnO sensor's measured responses are around 6%, 45%, 20% and 16% when the sensor is respectively operated at 250 °C, 300 °C, 350 °C, and 400 °C.

摘要

本研究在半导体型SnO MEMS SO气体传感器中使用固态YSZ电解质膜来增强氧化还原反应。YSZ膜通过射频溅射制备。XRD分析表明存在表示YSZ结晶面的(111)、(200)、(220)和(311)峰。实验结果表明，当SO浓度和传感器温度分别为250 ppb和400°C时，带有YSZ膜的SnO MEMS SO气体传感器比纯SnO MEMS SO气体传感器或YSZ MEMS SO气体传感器具有更好的传感器响应。当传感器分别在250°C、300°C、350°C和400°C下运行时，YSZ/SnO传感器的测量响应分别约为6%、45%、20%和16%。