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具有间隔席夫碱配体的半导体钴（III）-钠配合物的光敏肖特基势垒二极管行为

Photosensitive Schottky barrier diode behavior of a semiconducting Co(iii)-Na complex with a compartmental Schiff base ligand.

作者信息

Ghosh Kousik, Sil Sayantan, Ray Partha Pratim, Ortega-Castro Joaquín, Frontera Antonio, Chattopadhyay Shouvik

机构信息

Department of Chemistry, Inorganic Section, Jadavpur University Kolkata 700 032 India

Department of Physics, Jadavpur University Kolkata 700032 India.

出版信息

RSC Adv. 2019 Oct 28;9(60):34710-34719. doi: 10.1039/c9ra06354d.

DOI:10.1039/c9ra06354d
PMID:35530669
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC9073933/
Abstract

The opto-electronic properties of an X-ray characterized, end-to-end azide bridged cobalt(iii)-sodium complex, [(N)CoLNa(N)] , have been investigated in detail. The complex is found to be a direct semiconductor material as confirmed by determining the band gap of this complex by experimental as well as theoretical studies. The complex has also been used to construct a photosensitive Schottky device. Optical conductivity, calculated from the DFT study, has been used to analyze how the conductivity of the material changes upon illumination. The electrical conductivity and concomitantly, the photoconductivity of the material increase as a consequence of photon absorption.

摘要

一种经X射线表征的、端到端叠氮桥联的钴（III）-钠配合物[(N)CoLNa(N)]的光电性质已得到详细研究。通过实验和理论研究确定该配合物的带隙，证实其为直接半导体材料。该配合物还被用于构建一个光敏肖特基器件。由密度泛函理论（DFT）研究计算得出的光导率，已用于分析光照时材料的电导率如何变化。由于光子吸收，材料的电导率以及随之而来的光电导率增加。

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