Deng Zhongxun, Wang Xianhui
Shanxi Province Key Laboratory of Electrical Materials and Infiltration Technology, School of Materials Science and Engineering, Xi'an University of Technology Xi'an 710048 Shaanxi P. R. China
Energy and Engineering College, Yulin University Yulin 719000 Shaanxi P. R. China.
RSC Adv. 2019 Aug 20;9(45):26024-26029. doi: 10.1039/c9ra03175h. eCollection 2019 Aug 19.
Combining two different layered structures to form a van der Waals (vdW) heterostructure has recently emerged as an intriguing way of designing electronic and optoelectronic devices. Effects of the strain on the electronic properties of GaN/graphene heterostructure are investigated by using first-principles calculation. In the GaN/graphene heterostructure, the strain can control not only the Schottky barrier, but also contact types at the interface. Moreover, when the uniaxial strain is above -1% or the biaxial strain is above 0%, the contact type transforms to ohmic contact. These results provide a detailed understanding of the interfacial properties of GaN/graphene and help to predict the performance of the GaN/graphene heterostructure on nanoelectronics and nanocomposites.
将两种不同的层状结构结合形成范德华（vdW）异质结构，最近已成为设计电子和光电器件的一种有趣方法。通过第一性原理计算研究了应变对GaN/石墨烯异质结构电子性质的影响。在GaN/石墨烯异质结构中，应变不仅可以控制肖特基势垒，还可以控制界面处的接触类型。此外，当单轴应变高于-1%或双轴应变高于0%时，接触类型转变为欧姆接触。这些结果提供了对GaN/石墨烯界面性质的详细理解，并有助于预测GaN/石墨烯异质结构在纳米电子学和纳米复合材料方面的性能。
