Wagner Thorsten, Antczak Grażyna, Györök Michael, Sabik Agata, Volokitina Anna, Gołek Franciszek, Zeppenfeld Peter
Johannes Kepler University, Institute of Experimental Physics, Surface Science Division, Altenberger Strasse 69, 4040 Linz, Austria.
University of Wroclaw, Institute of Experimental Physics, Pl. M. Borna 9, 50-204 Wroclaw, Poland.
ACS Appl Mater Interfaces. 2022 May 10;14(20):23983-9. doi: 10.1021/acsami.2c02996.
We report an in situ study of the thin-film growth of cobalt-phthalocyanine on Ag(100) surfaces using photoelectron emission microscopy (PEEM) and the Anderson method. Based on the Fowler-DuBridge theory, we were able to correlate the evolution of the mean electron yield acquired with PEEM for coverages up to two molecular layers of cobalt-phthalocyanine to the global work function changes measured with the Anderson method. For coverages above two monolayers, the transients measured with the Anderson method and those obtained with PEEM show different trends. We exploit this discrepancy to determine the inelastic mean free path of the low-energy electrons while passing through the third layer of CoPc.
我们报告了一项使用光电子发射显微镜（PEEM）和安德森方法对钴酞菁在Ag(100)表面的薄膜生长进行的原位研究。基于福勒-杜布里奇理论，我们能够将用PEEM获取的平均电子产率随覆盖度（高达两层钴酞菁分子层）的变化与用安德森方法测量的全局功函数变化联系起来。对于超过两个单层的覆盖度，用安德森方法测量的瞬态和用PEEM获得的瞬态显示出不同的趋势。我们利用这种差异来确定低能电子穿过第三层CoPc时的非弹性平均自由程。
