Zhang Zheng-Feng, Su Ming-Der
Department of Applied Chemistry, National Chiayi University Chiayi 60004 Taiwan.
Department of Medicinal and Applied Chemistry, Kaohsiung Medical University Kaohsiung 80708 Taiwan
RSC Adv. 2018 Jul 10;8(43):24641-24653. doi: 10.1039/c8ra03866j. eCollection 2018 Jul 2.
The group 9 organometallic complexes η-CpM(CO) (M = Co, Rh, and Ir) and Si(CH)(H) have been considered as a model system to study their photochemical decarbonyl reactions as well as the Si-H bond activation reactions using the CASSCF and MP2-CAS computational methods. For the cobalt complex, three kinds of reaction pathways, which result in the same oxidative addition product, are investigated. Our theoretical finding demonstrated that after the photoirradiation, η-CpCo(CO) loses one CO ligand without any difficulty to form either the triplet ([η-CpCo(CO)]) or singlet ([η-CpCo(CO)]) species. The former plays a decisive role in the formation of the final oxidative addition product. On the other hand, the latter plays no role in the production of the final product molecule, but its singlet cobalt center interacts weakly with solvent molecules ((Me)SiH) to produce an alkyl-solvated organometallic complex, which is experimentally detectable. The present works reveal that both η-CpRh(CO) and η-CpIr(CO) should adopt the conical intersection mechanism after they are irradiated by light. Moreover, our theoretical examinations strongly suggest that for the 16-electron monocarbonyl η-CpM(CO) (M = Rh and Ir) species, the insertion into a Si-H bond by the Ir system is much more facile and more exothermic than that for the Rh counterpart.
已将第9族有机金属配合物η-CpM(CO)(M = Co、Rh和Ir)与Si(CH)(H)视为一个模型体系,使用CASSCF和MP2-CAS计算方法研究它们的光化学脱羰基反应以及Si-H键活化反应。对于钴配合物,研究了导致相同氧化加成产物的三种反应途径。我们的理论研究结果表明,光照射后,η-CpCo(CO)毫无困难地失去一个CO配体,形成三重态([η-CpCo(CO)])或单重态([η-CpCo(CO)])物种。前者在最终氧化加成产物的形成中起决定性作用。另一方面,后者在最终产物分子的生成中不起作用,但其单重态钴中心与溶剂分子((Me)SiH)弱相互作用,生成一种烷基溶剂化有机金属配合物,这在实验中是可检测到的。目前的研究表明,η-CpRh(CO)和η-CpIr(CO)在光照后都应采用锥形交叉机制。此外,我们的理论研究强烈表明,对于16电子单羰基η-CpM(CO)(M = Rh和Ir)物种,Ir体系插入Si-H键比Rh对应物更容易且放热更多。