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通过溶胶-凝胶自燃烧技术合成的MgMnTMO(TM = Co、Ni和Cu)纳米颗粒的结构与性能

Structures and properties of MgMnTMO (TM = Co, Ni, and Cu) nanoparticles synthesized by sol-gel auto combustion technique.

作者信息

Dar M A, Varshney Dinesh

机构信息

Materials Science Laboratory, School of Physics, Vigyan Bhavan, Devi Ahilya University Khandwa Road Campus Indore 452001 India

出版信息

RSC Adv. 2018 Apr 17;8(25):14120-14128. doi: 10.1039/c8ra00816g. eCollection 2018 Apr 11.

Abstract

The room temperature structural, optical and dielectric properties of MgMnO and MgMnTMO (TM = Co, Ni, and Cu) nanoparticles are reported. All transition metal nanocrystalline samples were successfully prepared by sol-gel auto combustion method. X-ray powder diffraction patterns at room temperature confirmed the formation of single-phase cubic structure with an 3̄ space group for all prepared samples. Slight variation in the lattice parameter of TM doped MgMnO has been observed. Using Rietveld refinement of XRD data, the space group and lattice parameters are determined. Scanning electron microscopy (SEM) measurements were performed to understand the morphology and grain size of the MgMnTMO (TM = Co, Ni, and Cu) nanocrystals. The estimated band gaps as calculated by using UV-Vis spectroscopy are found to be 3.59, 3.61, 5.63 and 3.55 eV for MgMnO and MgMnTMO (TM = Co, Ni, and Cu) nanocrystals, respectively. Both dielectric constant and dielectric loss is found to decrease due to TM (transition metal) doping. The conductivity is found to increase with increase in frequency. Electric modulus spectra reflect the contributions from grain effects: the large resolved semicircle arc caused by the grain effect. The results obtained in this study were discussed comparatively with those cited in the literature.

摘要

报道了MgMnO和MgMnTMO(TM = Co、Ni和Cu)纳米颗粒的室温结构、光学和介电性能。所有过渡金属纳米晶样品均通过溶胶-凝胶自燃法成功制备。室温下的X射线粉末衍射图谱证实了所有制备样品均形成具有3̄空间群的单相立方结构。观察到TM掺杂的MgMnO晶格参数略有变化。通过对XRD数据进行Rietveld精修,确定了空间群和晶格参数。进行扫描电子显微镜(SEM)测量以了解MgMnTMO(TM = Co、Ni和Cu)纳米晶体的形态和晶粒尺寸。通过紫外-可见光谱法计算得出,MgMnO和MgMnTMO(TM = Co、Ni和Cu)纳米晶体的估计带隙分别为3.59、3.61、5.63和3.55 eV。发现由于TM(过渡金属)掺杂,介电常数和介电损耗均降低。发现电导率随频率增加而增加。电模量谱反映了晶粒效应的贡献:由晶粒效应引起的大的分辨半圆弧形。将本研究获得的结果与文献中引用的结果进行了比较讨论。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/79d5/9079913/4778bd24fded/c8ra00816g-f1.jpg

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