在主体YPO中由掺杂的铕和镨制成的双级联修饰金属氧化物半导体场效应晶体管。

Double cascade dressed MOSFET from doped Euand Pr in a host YPO.

作者信息

Fan Huanrong, Imran Al, Raza Faizan, Ahmed Irfan, Amjad Kamran, Li Peng, Zhang Yanpeng

机构信息

Key Laboratory for Physical Electronics and Devices of the Ministry of Education, Shaanxi Key Lab of Information Photonic Techniques, Xi'an Jiaotong University Xi'an 710049 China

Department of Physics, City University of Hong Kong Hong Kong.

出版信息

RSC Adv. 2019 Nov 27;9(66):38828-38833. doi: 10.1039/c9ra08550e. eCollection 2019 Nov 25.

DOI:10.1039/c9ra08550e

PMID:35540233

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC9075994/

Abstract

In this paper, we study double cascade dressed optical metal oxide semiconductor field-effect transistor (MOSFET) by exploiting enhancement and suppression for mixed-phase (hexagonal + tetragonal) of Eu:YPO and different phases (hexagonal + tetragonal and pure tetragonal) of Pr:YPO crystals. We report variation of fine structure energy levels in different doped ions (Eu and Pr) in the host YPO crystal. We compared multi-level energy transition from a single dressing laser with single level energy transition from double cascade dressing lasers. Gate delay facilitates multi-energy level dressed transition and is modeled through a Hamiltonian. Based on the results of double cascade dressing, we have realized MOSFET for logic gates (inverter and logic not and gate) with a switching contrast of about 92% using a mixed phase of Pr:YPO.

摘要

在本文中，我们通过利用Eu:YPO混合相（六方 + 四方）以及Pr:YPO晶体不同相（六方 + 四方和纯四方）的增强和抑制效应，研究了双级联修饰光学金属氧化物半导体场效应晶体管（MOSFET）。我们报告了基质YPO晶体中不同掺杂离子（Eu和Pr）的精细结构能级变化。我们比较了单修饰激光的多能级能量跃迁与双级联修饰激光的单能级能量跃迁。栅极延迟促进了多能级修饰跃迁，并通过哈密顿量进行建模。基于双级联修饰的结果，我们使用Pr:YPO的混合相实现了用于逻辑门（反相器以及逻辑非门和与门）的MOSFET，其开关对比度约为92%。