Baek Eunwoo, Son Jaemin, Cho Kyoungah, Kim Sangsig
Department of Semiconductor Systems Engineering, Korea University, 145 Anam-ro, Seoul 02841, Korea.
Department of Electrical Engineering, Korea University, 145 Anam-ro, Seoul 02841, Korea.
Micromachines (Basel). 2022 Apr 9;13(4):590. doi: 10.3390/mi13040590.
In this paper, we propose a logic-in-memory (LIM) inverter comprising a silicon nanowire (SiNW) n-channel feedback field-effect transistor (n-FBFET) and a SiNW p-channel metal oxide semiconductor field-effect transistor (p-MOSFET). The hybrid logic and memory operations of the LIM inverter were investigated by mixed-mode technology computer-aided design simulations. Our LIM inverter exhibited a high voltage gain of 296.8 (/) when transitioning from logic '1' to '0' and 7.9 (/) when transitioning from logic '0' to '1', while holding calculated logic at zero input voltage. The energy band diagrams of the n-FBFET structure demonstrated that the holding operation of the inverter was implemented by controlling the positive feedback loop. Moreover, the output logic can remain constant without any supply voltage, resulting in zero static power consumption.
在本文中，我们提出了一种内存逻辑（LIM）反相器，它由一根硅纳米线（SiNW）n沟道反馈场效应晶体管（n-FBFET）和一根SiNW p沟道金属氧化物半导体场效应晶体管（p-MOSFET）组成。通过混合模式技术计算机辅助设计模拟研究了LIM反相器的混合逻辑和存储操作。我们的LIM反相器在从逻辑“1”转换为“0”时表现出296.8（/）的高电压增益，在从逻辑“0”转换为“1”时表现出7.9（/）的高电压增益，同时在零输入电压下保持计算出的逻辑。n-FBFET结构的能带图表明，反相器的保持操作是通过控制正反馈回路来实现的。此外，输出逻辑可以在没有任何电源电压的情况下保持恒定，从而实现零静态功耗。
