Otsuka Rikuo, Wang Yang, Mori Takehiko, Michinobu Tsuyoshi
Department of Materials Science and Engineering, Tokyo Institute of Technology 2-12-1 Ookayama, Meguro-ku Tokyo 152-8552 Japan
RSC Adv. 2018 Mar 13;8(18):9822-9832. doi: 10.1039/c8ra01088a. eCollection 2018 Mar 5.
We report the synthesis of a linear-type dibromocarbazoledioxazine (CZ) derivative as a new precursor for semiconducting polymers. The chemical structures of the CZ unit and its polymers with thiophene or thienothiophene spacers (namely, PCZT and PCZTT) were fully characterized. PCZT and PCZTT possessed similar medium optical band gap ( ) and electrochemical band gap ( ) of around 1.70 eV estimated from the onset absorption and electrochemical redox potentials of the thin films, respectively. Computational density functional theory (DFT) calculations suggested that the backbone of the PCZT might be highly twisted, while that of PCZTT could be very planar. The effect of different backbone geometries on the charge-transport properties was studied by using thin film transistors (TFTs). The TFT device based on PCZTT showed a four times higher hole mobility as compared to that based on PCZT. The superior TFT performances of PCZTT were reasonably attributed to its edge-on backbone packing orientations toward the Si substrate revealed by the grazing-incidence wide-angle X-ray scattering (GIWAXS), which was favorable for in-plane charge transport in the TFT devices.
我们报道了一种线性二溴咔唑二恶嗪(CZ)衍生物的合成,它是一种用于半导体聚合物的新型前体。对CZ单元及其与噻吩或噻吩并噻吩间隔基的聚合物(即PCZT和PCZTT)的化学结构进行了全面表征。根据薄膜的起始吸收和电化学氧化还原电位估计,PCZT和PCZTT分别具有相似的约1.70 eV的中等光学带隙( )和电化学带隙( )。计算密度泛函理论(DFT)计算表明,PCZT的主链可能高度扭曲,而PCZTT的主链可能非常平面。通过使用薄膜晶体管(TFT)研究了不同主链几何结构对电荷传输性能的影响。基于PCZTT的TFT器件显示出的空穴迁移率是基于PCZT的TFT器件的四倍。PCZTT优异的TFT性能合理地归因于掠入射广角X射线散射(GIWAXS)揭示的其主链沿边缘方向向Si衬底的堆积取向,这有利于TFT器件中的面内电荷传输。