Park Chanil, Im Soeun, Cho Wonseok, Kim Yunryeol, Kim Jung Hyun
Department of Chemical and Biomolecular Engineering, Yonsei University Yeonsero 50, Seodaemun-gu Seoul 120-749 Republic of Korea
RSC Adv. 2018 Apr 9;8(23):12992-12998. doi: 10.1039/c8ra01122b. eCollection 2018 Apr 3.
Poly(3,4-ethylenedioxythiophene/aniline) : poly(styrene sulfonate), P(EDOT/Ani) : PSS, with enhanced absorption of near infrared light, was prepared by oxidative polymerization. We demonstrated that a two-stage shot growth process optimizes the absorption of the polymer in the near infrared region a controlled monomer addition time. In other words, the optical properties of the polymer complex were improved by controlling the time intervals of aniline monomer addition. P(EDOT/Ani) : PSS was characterized by Fourier transform infrared spectroscopy (FT-IR) and X-ray photoelectron spectroscopy (XPS). The shielding efficiency of the P(EDOT/Ani) : PSS films was calculated by using data from ultraviolet, visible, and near infrared (UV-vis-NIR) spectroscopy. The introduction of polyaniline to PEDOT increased the absorption in the near infrared area. In comparison with PEDOT : PSS film, the total shielding efficiency of the P(EDOT/Ani) : PSS film increased to 65.8% from 54.6% at 60% transmittance. The maximum NIR shielding efficiency (SE) of the film is 92.7% and the transmittance is 46.5%. Also, large-scale P(EDOT/Ani) : PSS film was fabricated using roll-to-roll slot-die equipment and a heat shielding test of the film was conducted by measuring the temperature variation, in order to prove the enhanced heat shielding effect. P(EDOT/Ani) : PSS prepared by a two-stage shot growth system showed excellent potential as a heat shielding material.
通过氧化聚合制备了具有增强近红外光吸收能力的聚（3,4-乙撑二氧噻吩/苯胺）：聚（苯乙烯磺酸盐），即P(EDOT/Ani)：PSS。我们证明了两阶段脉冲生长过程通过控制单体添加时间优化了聚合物在近红外区域的吸收。换句话说，通过控制苯胺单体添加的时间间隔改善了聚合物复合物的光学性能。通过傅里叶变换红外光谱（FT-IR）和X射线光电子能谱（XPS）对P(EDOT/Ani)：PSS进行了表征。利用紫外、可见和近红外（UV-vis-NIR）光谱数据计算了P(EDOT/Ani)：PSS薄膜的屏蔽效率。聚苯胺引入PEDOT增加了在近红外区域的吸收。与PEDOT：PSS薄膜相比，P(EDOT/Ani)：PSS薄膜在60%透过率时的总屏蔽效率从54.6%提高到了65.8%。该薄膜的最大近红外屏蔽效率（SE）为92.7%，透过率为46.5%。此外，使用卷对卷狭缝模头设备制备了大规模的P(EDOT/Ani)：PSS薄膜，并通过测量温度变化对该薄膜进行了热屏蔽测试，以证明增强的热屏蔽效果。通过两阶段脉冲生长系统制备的P(EDOT/Ani)：PSS作为一种热屏蔽材料显示出优异的潜力。
