Gao Wenhui, Zhai Guangmei, Zhang Caifeng, Shao Zhimeng, Zheng Lulu, Zhang Yong, Yang Yongzhen, Li Xuemin, Liu Xuguang, Xu Bingshe
Key Laboratory of Interface Science and Engineering in Advanced Materials of Ministry of Education, Research Centre of Advanced Materials Science and Technology, Taiyuan University of Technology Taiyuan Shanxi 030024 China
Collaborative Innovation Centre for Advanced Thin-film Optoelectronic Materials and Devices in Shanxi Province Taiyuan Shanxi 030024 China.
RSC Adv. 2018 Apr 20;8(27):15149-15157. doi: 10.1039/c8ra01422a. eCollection 2018 Apr 18.
An initial improvement in performance of PbS quantum dot solar cells composed of one thick layer of PbS quantum dots (QDs) treated with tetrabutylammonium iodide (PbS-TBAI) and one thin layer of PbS QDs capped with 1,2-ethanedithiol (PbS-EDT) over short-term air exposure is widely observed. However, the underlying mechanisms still remain elusive. In the work, we sought to understand the mechanisms as well as their physicochemical origins using a combination of X-ray photoelectron spectroscopy (XPS) and various electronic measurements. It is found that the PbS-TBAI film plays a dominant role in the initial device performance improvement compared with the PbS-EDT film. The PbS-TBAI film is compensation doped upon short-term air exposure (one to three days) owing to the increase of Pb-O and/or Pb-OH species, enabling its energy band to align better with the electron transport layer for more efficient charge extraction. Moreover, it is demonstrated that the short-term air exposure is capable of reducing defects in the devices and improving the diode quality, resulting in an initial increase in device performance. This work contributes to the fundamental understanding of the surface chemistry changes of PbS quantum dots treated by different ligands over air-exposure and the role of surface chemistry of quantum dots in optimizing their photovoltaic performance.
由一层用碘化四丁基铵处理的厚硫化铅量子点(PbS-TBAI)和一层用1,2-乙二硫醇封端的薄硫化铅量子点(PbS-EDT)组成的硫化铅量子点太阳能电池,在短期空气暴露下其性能的初步改善已被广泛观察到。然而,其潜在机制仍然难以捉摸。在这项工作中,我们试图通过结合X射线光电子能谱(XPS)和各种电子测量来理解这些机制及其物理化学起源。研究发现,与PbS-EDT薄膜相比,PbS-TBAI薄膜在初始器件性能改善中起主导作用。由于Pb-O和/或Pb-OH物种的增加,PbS-TBAI薄膜在短期空气暴露(一至三天)后发生补偿掺杂,使其能带能更好地与电子传输层对齐,从而实现更有效的电荷提取。此外,还证明了短期空气暴露能够减少器件中的缺陷并改善二极管质量,从而导致器件性能的初步提高。这项工作有助于从根本上理解不同配体处理的硫化铅量子点在空气暴露下的表面化学变化,以及量子点表面化学在优化其光伏性能中的作用。