Nam Yunyong, Kim Hee-Ok, Cho Sung Haeng, Ko Park Sang-Hee
Smart & Soft Materials & Devices Laboratory (SSMD), Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST) 291 Daehak-ro, Yuseong-gu Daejeon 34141 Korea
ICT Materials & Components Research Laboratory, Electronics and Telecommunications Research Institute (ETRI) 218 Gajeong-ro, Yuseong-gu Daejeon 34129 Korea.
RSC Adv. 2018 Feb 1;8(10):5622-5628. doi: 10.1039/c7ra12841j. eCollection 2018 Jan 29.
We fabricated amorphous InGaZnO thin film transistors (a-IGZO TFTs) with aluminum oxide (AlO) as a gate insulator grown through atomic layer deposition (ALD) method at different deposition temperatures ( ). The AlO gate insulator with a low exhibited a high amount of hydrogen in the film, and the relationship between the hydrogen content and the electrical properties of the TFTs was investigated. The device with the AlO gate insulator having a high H content showed much better transfer parameters and reliabilities than the low H sample. This is attributed to the defect passivation effect of H in the active layer, which is diffused from the AlO layer. In addition, according to the post-annealing temperature ( ), a-IGZO TFTs exhibited two unique changes of properties; the degradation in low and the enhancement in high , as explained in terms of H diffusion from the gate insulator to an active layer.
我们通过原子层沉积（ALD）方法在不同沉积温度下制备了以氧化铝（AlO）作为栅极绝缘体的非晶铟镓锌氧化物薄膜晶体管（a-IGZO TFTs）。具有低[具体参数未给出]的AlO栅极绝缘体在薄膜中表现出大量的氢，并研究了氢含量与TFTs电学性能之间的关系。具有高氢含量的AlO栅极绝缘体的器件比低氢样品表现出更好的转移参数和可靠性。这归因于从AlO层扩散到有源层中的氢在有源层中的缺陷钝化效应。此外，根据退火后温度[具体参数未给出]，a-IGZO TFTs表现出两种独特的性能变化；在低[具体参数未给出]时性能退化，在高[具体参数未给出]时性能增强，这是根据氢从栅极绝缘体扩散到有源层来解释的。
