Xiao Yan, Zhang Long, Peng Fei, Pan Ge-Bo
Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences 215123 Suzhou P. R. China
University of Chinese Academy of Sciences 100049 Beijing P. R. China.
RSC Adv. 2018 Jan 31;8(10):5344-5349. doi: 10.1039/c7ra12953j. eCollection 2018 Jan 29.
The fabrication of a metal phthalocyanine (MPc) film with good transferability and exploitation of its properties are very important for further application. In this study, a continuous free-standing film of CoPc was obtained on an ionic liquid (IL) surface a physical vapor deposition (PVD) method. The as-obtained film has a β-phase structure and is constructed with one dimensional CoPc to form a network structure. The morphology of the film could be easily tuned by tunning the flow rate of the carrier gas. More importantly, the device based on these films shows obvious electrical switching and negative differential resistance (NDR) characteristics. The maximum ON/OFF current ratio of two distinctive conductivity states is ∼100 at a reading voltage of +30 V. The conductivity and conductive switching behavior of the NW constructed device are better than the device constructed with NRs. The NDR effect and electrical switching conduction mechanism can be explained by the charge trap elements of the Co/Co redox couples. The above results open up the possibility of CoPc as a memory medium for information storage and logic circuits applications.
制备具有良好可转移性的金属酞菁（MPc）薄膜并开发其性能对于进一步应用非常重要。在本研究中，通过物理气相沉积（PVD）方法在离子液体（IL）表面获得了连续的独立式CoPc薄膜。所获得的薄膜具有β相结构，由一维CoPc构成网络结构。通过调节载气流量可以轻松调节薄膜的形貌。更重要的是，基于这些薄膜的器件表现出明显的电开关和负微分电阻（NDR）特性。在+30 V的读取电压下，两种不同导电状态的最大开/关电流比约为100。基于纳米线构建的器件的导电性和导电开关行为优于基于纳米棒构建的器件。NDR效应和电开关传导机制可以用Co/Co氧化还原对的电荷陷阱元素来解释。上述结果为CoPc作为信息存储和逻辑电路应用的存储介质开辟了可能性。
