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用于高性能氧还原反应的纯噻吩硫掺杂石墨烯的合成

Synthesis of Pure Thiophene-Sulfur-Doped Graphene for an Oxygen Reduction Reaction with High Performance.

作者信息

Yin Yun-Chao, Deng Ruo-Xi, Yang Dong-Rui, Sun Yi-Bai, Li Zhong-Qiu, Xia Xing-Hua

机构信息

State Key Laboratory of Analytical Chemistry for Life Science, School of Chemistry and Chemical Engineering, Nanjing University, Nanjing 210023, China.

出版信息

J Phys Chem Lett. 2022 May 19;13(19):4350-4356. doi: 10.1021/acs.jpclett.2c00972. Epub 2022 May 11.

Abstract

Various S-bonding configurations existing in sulfur-doped reduced graphene oxide (S-rGO) show different electronic structures and physiochemical properties. Thus, understanding the properties of unique S-bonding configurations requires the construction of S-rGO with only single configuration. Here, we synthesized S-rGO with a pure thiophene-sulfur configuration through a simple and low-cost hydrothermal method by simply controlling the oxidation degree of the graphene oxide (GO) precursor. Through the use of a GO precursor with a high content of C-O groups, pure doping of the thiophene-sulfur configuration in the rGO can be achieved. Further electrochemical characterization reveals an increased electrocatalytic activity of the pure thiophene-sulfur-doped S-rGO in the oxygen reduction reaction, indicating the important role of thiophene-sulfur. The present work deepens the understanding of the functions of doped nonmetal elements in carbon materials in electrocatalysis and helps in the design of high performance electrocatalysts.

摘要

存在于硫掺杂还原氧化石墨烯(S-rGO)中的各种S键合构型表现出不同的电子结构和物理化学性质。因此,要了解独特S键合构型的性质,需要构建仅具有单一构型的S-rGO。在此,我们通过简单且低成本的水热法,通过简单控制氧化石墨烯(GO)前驱体的氧化程度,合成了具有纯噻吩硫构型的S-rGO。通过使用具有高含量C-O基团的GO前驱体,可以实现rGO中噻吩硫构型的纯掺杂。进一步的电化学表征表明,纯噻吩硫掺杂的S-rGO在氧还原反应中的电催化活性增强,这表明了噻吩硫的重要作用。本工作加深了对碳材料中掺杂非金属元素在电催化中功能的理解,并有助于高性能电催化剂的设计。

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