Vinayakumar V, Shaji S, Avellaneda D, Aguilar-Martínez J A, Krishnan B
Facultad de Ingeniería Mecánica y Eléctrica, Universidad Autónoma de Nuevo León San Nicolás de los Garza Nuevo León 66455 Mexico
Centro de Innovación, Investigación y Desarrollo en Ingeniería y Tecnología (CIIDIT), Universidad Autónoma de Nuevo León, Parque de Investigación e Innovación Tecnológica Apodaca Nuevo León 66600 Mexico.
RSC Adv. 2018 Sep 4;8(54):31055-31065. doi: 10.1039/c8ra05662e. eCollection 2018 Aug 30.
Ternary chalcostibite copper antimony sulfide (CuSbS) is an emerging semiconductor material having applications in photovoltaics, energy storage and optoelectronics due to its high absorption coefficient, suitable bandgap, and it consists of non-toxic and earth abundant elements. CuSbS thin films are prepared by combining chemical bath deposition (antimony sulfide (SbS)) and thermal evaporation (copper (Cu)) followed by a heat treatment and their application as visible to near infrared photodetectors is reported. Crystalline structure, elemental composition, chemical state, morphology and optoelectronic properties of the films were characterized by various techniques. The effect of three different Cu thicknesses (CAS 20, CAS 30 and CAS 40 nm) on the photodetection properties are evaluated under illumination using light emitting diodes (LEDs) and a laser. The photodetectors fabricated are successfully tested under different wavelengths, power densities and applied voltage and their photoresponse cyclic stability for each wavelength of illumination was recorded. From the sensitivity calculations, the sample with 20 nm Cu thickness (CAS 20) showed higher detection sensitivity for visible to near infrared wavelengths. Better responsivity results were obtained for CAS 40 because of its improved crystallinity and phase purity. Photodetector properties such as sensitivity and responsivity are evaluated for all the samples. These results are beneficial for cost effective and environment friendly photodetectors and optoelectronic devices based on CuSbS thin films.
三元硫铜锑矿(CuSbS)是一种新兴的半导体材料,因其具有高吸收系数、合适的带隙,且由无毒且地球上储量丰富的元素组成,故而在光伏、储能和光电子领域有应用。通过化学浴沉积(硫化锑(SbS))和热蒸发(铜(Cu))相结合,随后进行热处理来制备CuSbS薄膜,并报道了其作为可见光至近红外光探测器的应用。采用多种技术对薄膜的晶体结构、元素组成、化学状态、形态和光电性能进行了表征。在使用发光二极管(LED)和激光照明的条件下,评估了三种不同铜厚度(20、30和40纳米的CAS)对光探测性能的影响。所制备的光探测器在不同波长、功率密度和施加电压下成功进行了测试,并记录了每个照明波长下其光响应的循环稳定性。通过灵敏度计算,铜厚度为20纳米的样品(CAS 20)对可见光至近红外波长显示出更高的探测灵敏度。由于其结晶度和相纯度的提高,CAS 40获得了更好的响应度结果。对所有样品的光探测器性能,如灵敏度和响应度进行了评估。这些结果对于基于CuSbS薄膜的经济高效且环境友好的光探测器和光电器件是有益的。