Department of Chemistry, University of Wisconsin-Stevens Point , Stevens Point, Wisconsin 54481, United States.
Department of Materials Science and Engineering, Northwestern University , Evanston, Illinois 60208, United States.
ACS Appl Mater Interfaces. 2017 Feb 8;9(5):4667-4673. doi: 10.1021/acsami.6b13033. Epub 2017 Jan 24.
Copper antimony sulfide (CuSbS) has been gaining traction as an earth-abundant absorber for thin-film photovoltaics given its near ideal band gap for solar energy conversion (∼1.5 eV), large absorption coefficient (>10 cm), and elemental abundance. Through careful in situ analysis of the deposition conditions, a low-temperature route to CuSbS thin films via atomic layer deposition has been developed. After a short (15 min) postprocess anneal at 225 °C, the ALD-grown CuSbS films were crystalline with micron-sized grains, exhibited a band gap of 1.6 eV and an absorption coefficient >10 cm, as well as a hole concentration of 10 cm. Finally, the ALD-grown CuSbS films were paired with ALD-grown TiO to form a photovoltaic device. This photovoltaic device architecture represents one of a very limited number of Cd-free CuSbS PV device stacks reported to date, and it is the first to demonstrate an open-circuit voltage on par with CuSbS/CdS heterojunction PV devices. While far from optimized, this work demonstrates the potential for ALD-grown CuSbS thin films in environmentally benign photovoltaics.
铜锑硫化物 (CuSbS) 因其对太阳能转换的近乎理想的能带隙 (∼1.5 eV)、大吸收系数 (>10 cm) 和元素丰度而成为薄膜光伏中一种很有前途的丰富材料吸收剂。通过对沉积条件的仔细原位分析，已经开发出了一种通过原子层沉积 (ALD) 低温制备 CuSbS 薄膜的方法。在 225°C 下进行短暂的(15 分钟)后处理退火后，ALD 生长的 CuSbS 薄膜具有微米级晶粒的结晶性，表现出 1.6 eV 的带隙和 >10 cm 的吸收系数，以及 10 cm 的空穴浓度。最后，ALD 生长的 CuSbS 薄膜与 ALD 生长的 TiO 配对形成光伏器件。这种光伏器件结构代表了迄今为止报道的为数不多的无 Cd 的 CuSbS PV 器件堆叠之一，并且它是第一个展示与 CuSbS/CdS 异质结 PV 器件相当的开路电压的堆叠。虽然远未达到优化，但这项工作展示了 ALD 生长的 CuSbS 薄膜在环保型光伏中的潜力。
