Tang Ying, Qin Qilin, Yang Hongyu, Feng Shengnan, Zhang Chunfeng, Zhang Jiayu, Xiao Min, Wang Xiaoyong
National Laboratory of Solid State Microstructures, School of Physics, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China.
Advanced Photonics Center, School of Electronic Science and Engineering, Southeast University, Nanjing 210096, China.
Nanoscale. 2022 May 26;14(20):7674-7681. doi: 10.1039/d2nr00305h.
The Auger recombination effect is strongly enhanced in semiconductor nanocrystals due to the quantum confinement, and various strategies in chemical synthesis have been employed so far to suppress this nonradiative decay pathway of multiple excitons. Here we apply external electric fields on single CdSe/CdS giant nanocrystals at room temperature, showing that the biexciton Auger and single-exciton radiative rates can be averagely decreased by ∼40 and ∼10%, respectively. In addition to a reduced overlap of the electron-hole wavefunctions, the large decrease of biexciton Auger rate could be contributed by the enhanced exciton-exciton repulsion, while the electron-hole exchange interaction might be weakened to cause the relatively small decrease of the single-exciton radiative rate. The above findings have thus proved that the external electric field can serve as a post-synthetic knob to tune the exciton recombination dynamics in semiconductor nanocrystals towards their efficient applications in various optoelectronic devices.
由于量子限制效应,俄歇复合效应在半导体纳米晶体中得到显著增强,目前已经采用了各种化学合成策略来抑制多激子的这种非辐射衰变途径。在此,我们在室温下对单个CdSe/CdS巨型纳米晶体施加外部电场,结果表明双激子俄歇速率和单激子辐射速率分别平均降低了约40%和约10%。除了电子 - 空穴波函数重叠减少外,双激子俄歇速率的大幅降低可能归因于激子 - 激子排斥增强,而电子 - 空穴交换相互作用可能被削弱,导致单激子辐射速率的降低相对较小。上述研究结果证明,外部电场可作为一种合成后调节半导体纳米晶体中激子复合动力学的手段,以实现其在各种光电器件中的高效应用。