Suppr超能文献

单个量子点中双激子和负一价、正一价三电子的俄歇复合。

Auger recombination of biexcitons and negative and positive trions in individual quantum dots.

机构信息

Chemistry Division, Los Alamos National Laboratory , Los Alamos, New Mexico 87545, United States .

出版信息

ACS Nano. 2014 Jul 22;8(7):7288-96. doi: 10.1021/nn5023473. Epub 2014 Jun 18.

Abstract

Charged exciton states commonly occur both in spectroscopic studies of quantum dots (QDs) and during operation of QD-based devices. The extra charge added to the neutral exciton modifies its radiative decay rate and also opens an additional nonradiative pathway associated with an Auger process whereby the recombination energy of an exciton is transferred to the excess charge. Here we conduct single-dot spectroscopic studies of Auger recombination in thick-shell ("giant") CdSe/CdS QDs with and without an interfacial alloy layer using time-tagged, time-correlated single-photon counting. In photoluminescence (PL) intensity trajectories of some of the dots, we resolve three distinct states of different emissivities ("bright", "gray", and "dark") attributed, respectively, to the neutral exciton and negative and positive trions. Simultaneously acquired PL lifetime trajectories indicate that the positive trion is much shorter lived than the negative trion, which can be explained by a high density of valence band states and a small hole localization radius (defined by the QD core size), factors that favor an Auger process involving intraband excitation of a hole. A comparison of trion and biexciton lifetimes suggests that the biexciton Auger decay can be treated in terms of a superposition of two independent channels associated with positive- and negative-trion pathways. The resulting interdependence between Auger time constants might simplify the studies of multicarrier recombination by allowing one, for example, to infer Auger lifetimes of trions of one sign based on the measurements of biexciton decay and dynamics of the trions of the opposite sign or, alternatively, estimate the biexciton lifetime based on studies of trion dynamics.

摘要

激子电荷态通常既存在于量子点(QD)的光谱研究中,也存在于基于 QD 的器件的工作中。与中性激子结合的额外电荷会改变其辐射衰减率,并打开与俄歇过程相关的附加非辐射途径,其中激子的复合能量被转移到多余的电荷上。在这里,我们使用时间标记、时间相关的单光子计数法,对具有和不具有界面合金层的厚壳(“巨型”)CdSe/CdS QD 中的俄歇复合进行了单点光谱研究。在一些点的光致发光(PL)强度轨迹中,我们解析出了三种不同发射率的不同状态(“亮”、“灰”和“暗”),分别归因于中性激子以及负一价和正一价三价子。同时获得的 PL 寿命轨迹表明,正三价子的寿命比负三价子短得多,这可以通过价带态的高密度和小的空穴局域半径(由 QD 核尺寸定义)来解释,这些因素有利于涉及带内空穴激发的俄歇过程。三价子和双激子寿命的比较表明,双激子俄歇衰减可以用两个与正三价子和负三价子途径相关的独立通道的叠加来处理。俄歇时间常数之间的这种相互依赖性可能会简化多载流子复合的研究,例如,允许人们根据双激子衰减和相反符号的三价子动力学的测量来推断一种符号的三价子的俄歇寿命,或者基于三价子动力学的研究来估计双激子寿命。

文献检索

告别复杂PubMed语法,用中文像聊天一样搜索,搜遍4000万医学文献。AI智能推荐,让科研检索更轻松。

立即免费搜索

文件翻译

保留排版,准确专业,支持PDF/Word/PPT等文件格式,支持 12+语言互译。

免费翻译文档

深度研究

AI帮你快速写综述,25分钟生成高质量综述,智能提取关键信息,辅助科研写作。

立即免费体验