Qiang Yujie, Zhang Shengtao, Xiang Qin, Tan Bochuan, Li Wenpo, Chen Shijin, Guo Lei
School of Chemistry and Chemical Engineering, Chongqing University Chongqing 400044 China
Bomin Electronics Ltd. Meizhou 514021 China.
RSC Adv. 2018 Nov 19;8(68):38860-38871. doi: 10.1039/c8ra08238c. eCollection 2018 Nov 16.
The inhibitive properties of four indazole-based compounds (IA, 4-FIA, 4-CIA, and 4-BIA) on copper corrosion in 0.5 M HSO solution were investigated using electrochemical measurements, surface characterization techniques and molecular modelling methods. Electrochemical tests indicate that the inhibition efficiencies increase with incremental concentration and all halogeno-substituted indazoles (HIAs) possess superior inhibitive ability to native IA. The specific rating of inhibition performance obeys the order: IA < 4-FIA < 4-BIA < 4-CIA. All inhibition efficiencies of HIAs obtained were over 96% in 1 mM, especially, 4-CIA reaches 99.6%. Moreover, the corresponding inhibition mechanism was elucidated quantum chemical calculations allied to molecular dynamics simulation. In summary, the present study can help us to gain insight into the effect of halogeno-substitution on the inhibition efficiency of the IA molecule.
采用电化学测量、表面表征技术和分子建模方法,研究了四种吲唑基化合物(IA、4-FIA、4-CIA和4-BIA)在0.5 M HSO溶液中对铜腐蚀的抑制性能。电化学测试表明,抑制效率随浓度增加而提高,所有卤代吲唑(HIAs)对天然IA具有优异的抑制能力。抑制性能的具体评级顺序为:IA < 4-FIA < 4-BIA < 4-CIA。在1 mM时,所有获得的HIAs的抑制效率均超过96%,特别是4-CIA达到99.6%。此外,结合分子动力学模拟的量子化学计算阐明了相应的抑制机理。总之,本研究有助于我们深入了解卤代对IA分子抑制效率的影响。