Luo Haokun, Jia Yufei, Tian Fugu, Khajavikhan Mercedeh, Christodoulides Demetrios
Opt Lett. 2022 May 15;47(10):2450-2453. doi: 10.1364/OL.452929.
We develop a general methodology capable of analyzing the response of Weyl semimetal (WSM) photogalvanic networks. Both single-port and multiport configurations are investigated via extended versions of Norton's theorem. An equivalent circuit model is provided where the photogalvanic currents induced in these gapless topological materials can be treated as polarization-dependent sources. To illustrate our approach, we carry out transport simulations in arbitrarily shaped configurations involving pertinent WSMs. Our analysis indicates that the photogalvanic currents collected in a multi-electrode system directly depend on the geometry of the structure as well as on the excitation and polarization pattern of the incident light. Our results could be helpful in designing novel optoelectronic systems that make use of the intriguing features associated with WSMs.
我们开发了一种通用方法，能够分析外尔半金属（WSM）光电流网络的响应。通过诺顿定理的扩展版本研究了单端口和多端口配置。提供了一个等效电路模型，其中在这些无隙拓扑材料中感应的光电流可被视为偏振相关源。为了说明我们的方法，我们在涉及相关WSM的任意形状配置中进行了输运模拟。我们的分析表明，在多电极系统中收集的光电流直接取决于结构的几何形状以及入射光的激发和偏振模式。我们的结果可能有助于设计利用与WSM相关的有趣特性的新型光电子系统。
