Grupo de Materia Condensada-UdeA, Instituto de Física, Facultad de Ciencias Exactas y Naturales, Universidad de Antioquia UdeA, Calle 70 No. 52-21, Medellín 050010, Colombia.
Department of Physics, Science Faculty, Akdeniz University, 07058 Antalya, Turkey.
Int J Mol Sci. 2022 May 5;23(9):5169. doi: 10.3390/ijms23095169.
In this work, a finite periodic superlattice is studied, analyzing the probability of electronic transmission for two types of semiconductor heterostructures, GaAs/AlGaAs and InSe/InP. The changes in the maxima of the quasistationary states for both materials are discussed, making variations in the number of periods of the superlattice and its shape by means of geometric parameters. The effect of a non-resonant intense laser field has been included in the system to analyze the changes in the electronic transport properties by means of the Landauer formalism. It is found that the highest tunneling current is given for the GaAs-based compared to the InSe-based system and that the intense laser field improves the current-voltage characteristics generating higher current peaks, maintaining a negative differential resistance (NDR) effect, both with and without laser field for both materials and this fact allows to tune the magnitude of the current peak with the external field and therefore extend the range of operation for multiple applications. Finally, the power of the system is discussed for different bias voltages as a function of the chemical potential.
在这项工作中，研究了有限周期超晶格，分析了两种半导体异质结构 GaAs/AlGaAs 和 InSe/InP 的电子传输概率。讨论了这两种材料的准稳态最大值的变化，通过几何参数改变超晶格的周期数及其形状。在系统中加入非共振强激光场，通过 Landauer 形式主义分析电子输运性质的变化。结果发现，基于 GaAs 的系统比基于 InSe 的系统具有更高的隧道电流，强激光场改善了电流-电压特性，产生了更高的电流峰值，在有和没有激光场的情况下都保持了负微分电阻（NDR）效应，这两种材料都可以通过外部场来调整电流峰值的大小，从而扩展了多种应用的工作范围。最后，讨论了不同偏置电压下系统的功率作为化学势的函数。
