Dagua-Conda Carlos A, Gil-Corrales John A, Mora-Ramos Miguel E, Morales Alvaro L, Duque Carlos A
Grupo de Materia Condensada-UdeA, Instituto de Física, Facultad de Ciencias Exactas y Naturales, Universidad de Antioquia UdeA, Cl 70 No. 52-21, Medellín 050010, Colombia.
Instituto Tecnológico Metropolitano (ITM)-Institución Universitaria, Facultad de Ciencias, Campus Fraternidad, Calle 73 No. 76A-354 Vía al Volador, Medellín 050034, Colombia.
Nanomaterials (Basel). 2025 Jun 30;15(13):1009. doi: 10.3390/nano15131009.
Modifying the potential profiles in low-dimensional semiconductor heterostructures changes the confinement of particles, impacting the electronic transport properties. In this work, we study the electronic transport properties of a modified Pöschl-Teller double-barrier potential heterostructure of GaAs/AlGaAs, and for a similar double-barrier system including a Pöschl-Teller well between the barriers. For these two configurations, we calculated the current density-bias voltage characteristics, varying barrier and well half-width, the separation between barriers, and the depth of the central well. Additionally, the application of a non-resonant intense laser field. Our results show a redshift in the electronic transmission with increasing barrier separation, and a decrease in the area under the electronic transmission curve with the increase in the half-width of the barriers for both models. The characteristic current density-bias voltage curves in both models exhibit negative differential resistance, with tunable peaks that can be varied through changes in structural parameters and the external laser field.
修改低维半导体异质结构中的势分布会改变粒子的限制，从而影响电子传输特性。在这项工作中，我们研究了一种修改后的GaAs/AlGaAs的Pöschl-Teller双势垒势异质结构的电子传输特性，以及一个类似的双势垒系统，该系统在势垒之间包含一个Pöschl-Teller阱。对于这两种结构，我们计算了电流密度-偏置电压特性，改变了势垒和阱的半宽度、势垒之间的间距以及中心阱的深度。此外，还应用了非共振强激光场。我们的结果表明，对于这两种模型，随着势垒间距的增加，电子传输出现红移，并且随着势垒半宽度的增加，电子传输曲线下的面积减小。两种模型中的特征电流密度-偏置电压曲线都表现出负微分电阻，其可调谐峰值可以通过结构参数和外部激光场的变化而改变。
