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钙钛矿CHNHPbI多晶薄膜中电子和空穴朗德g因子的意外各向异性

Unexpected Anisotropy of the Electron and Hole Landé g-Factors in Perovskite CHNHPbI Polycrystalline Films.

作者信息

Garcia-Arellano Guadalupe, Trippé-Allard Gaëlle, Campos Thomas, Bernardot Frédérick, Legrand Laurent, Garrot Damien, Deleporte Emmanuelle, Testelin Christophe, Chamarro Maria

机构信息

Institut des NanoSciences de Paris, CNRS, Sorbonne Université, F-75005 Paris, France.

LuMIn (Laboratoire Lumière, Matière et Interfaces), CentraleSupélec, CNRS, ENS Paris-Saclay, Université Paris-Saclay, F-91190 Gif-sur-Yvette, France.

出版信息

Nanomaterials (Basel). 2022 Apr 19;12(9):1399. doi: 10.3390/nano12091399.

Abstract

In this work, we studied, at low temperature, the coherent evolution of the localized electron and hole spins in a polycrystalline film of CH3NH3PbI3 (MAPI) by using a picosecond-photo-induced Faraday rotation technique in an oblique magnetic field. We observed an unexpected anisotropy for the electron and hole spin. We determined the electron and hole Landé factors when the magnetic field was applied in the plane of the film and perpendicular to the exciting light, denoted as transverse ⟂ factors, and when the magnetic field was applied perpendicular to the film and parallel to the exciting light, denoted as parallel ∥ factors. We obtained |ge,⟂|=2.600 ± 0.004, |ge,∥|=1.604 ± 0.033 for the electron and |gh,⟂|=0.406 ± 0.002, |gh,∥|=0.299 ± 0.007 for the hole. Possible origins of this anisotropy are discussed herein.

摘要

在这项工作中,我们在低温下,通过使用皮秒光致法拉第旋转技术,在倾斜磁场中研究了CH3NH3PbI3(MAPI)多晶薄膜中局域电子和空穴自旋的相干演化。我们观察到电子和空穴自旋存在意想不到的各向异性。我们确定了在磁场施加于薄膜平面且垂直于激发光时(记为横向⟂因子)以及磁场垂直于薄膜且平行于激发光时(记为平行∥因子)的电子和空穴朗德因子。对于电子,我们得到|ge,⟂| = 2.600 ± 0.004,|ge,∥| = 1.604 ± 0.033;对于空穴,得到|gh,⟂| = 0.406 ± 0.002,|gh,∥| = 0.299 ± 0.007。本文讨论了这种各向异性可能的起源。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/148f/9105229/abe9c96b4cf3/nanomaterials-12-01399-g001.jpg

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