Xu Buqing, Wang Guilei, Du Yong, Miao Yuanhao, Wu Yuanyuan, Kong Zhenzhen, Su Jiale, Li Ben, Yu Jiahan, Radamson Henry H
Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China.
School of Integrated Circuits, University of Chinese Academy of Sciences, Beijing 100029, China.
Nanomaterials (Basel). 2022 Apr 19;12(9):1403. doi: 10.3390/nano12091403.
In this manuscript, the integration of a strained Ge channel with Si-based FinFETs was investigated. The main focus was the preparation of high-aspect-ratio (AR) fin structures, appropriate etching topography and the growth of germanium (Ge) as a channel material with a highly compressive strain. Two etching methods, the wet etching and in situ HCl dry etching methods, were studied to achieve a better etching topography. In addition, the selective epitaxial growth of Ge material was performed on a patterned substrate using reduced pressure chemical vapor deposition. The results show that a V-shaped structure formed at the bottom of the dummy Si-fins using the wet etching method, which is beneficial to the suppression of dislocations. In addition, compressive strain was introduced to the Ge channel after the Ge selective epitaxial growth, which benefits the pMOS transport characteristics. The pattern dependency of the Ge growth over the patterned wafer was measured, and the solutions for uniform epitaxy are discussed.
在本手稿中，研究了应变锗沟道与硅基鳍式场效应晶体管的集成。主要重点是高纵横比（AR）鳍结构的制备、合适的蚀刻形貌以及作为具有高压缩应变的沟道材料的锗（Ge）的生长。研究了两种蚀刻方法，即湿法蚀刻和原位HCl干法蚀刻方法，以获得更好的蚀刻形貌。此外，使用减压化学气相沉积在图案化衬底上进行了锗材料的选择性外延生长。结果表明，采用湿法蚀刻方法在虚拟硅鳍底部形成了V形结构，这有利于位错的抑制。此外，在锗选择性外延生长后，向锗沟道引入了压缩应变，这有利于pMOS传输特性。测量了图案化晶圆上锗生长的图案依赖性，并讨论了均匀外延的解决方案。
