辐射诱导CaSi晶体的成核与生长，这一过程既直接发生在外延CaF生长期间，也发生在CaF薄膜形成之后。

Radiation-Induced Nucleation and Growth of CaSi Crystals, Both Directly during the Epitaxial CaF Growth and after the CaF Film Formation.

作者信息

Dvurechenskii Anatoly V, Kacyuba Aleksey V, Kamaev Gennadiy N, Volodin Vladimir A, Smagina Zhanna V

机构信息

Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, 630090 Novosibirsk, Russia.

Physics Department, Novosibirsk State University, 630090 Novosibirsk, Russia.

出版信息

Nanomaterials (Basel). 2022 Apr 20;12(9):1407. doi: 10.3390/nano12091407.

DOI:10.3390/nano12091407

PMID:35564116

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC9103316/

Abstract

The radiation-induced phenomena of CaSi2 crystal growth were investigated, both directly during the epitaxial CaF2 growth on Si (111) and film irradiation with fast electrons on Si (111) after its formation, while maintaining the specified film thickness, substrate temperature and radiation dose. Irradiation in the process of the epitaxial CaF2 film growth leads to the formation of CaSi2 nanowhiskers with an average size of 5 µm oriented along the direction <110>. The electron irradiation of the formed film, under similar conditions, leads to the homogeneous nucleation of CaSi2 crystals and their proliferation as inclusions in the CaF2 film. It is shown that both approaches lead to the formation of CaSi2 crystals of the 3R polymorph in the irradiated region of a 10 nm thick CaF2 layer.

摘要

研究了CaSi2晶体生长的辐射诱导现象，一种是在Si(111)上外延生长CaF2的过程中直接进行，另一种是在形成CaF2薄膜后，用快电子对Si(111)上的薄膜进行辐照，同时保持规定的薄膜厚度、衬底温度和辐射剂量。在CaF2外延薄膜生长过程中进行辐照会导致形成平均尺寸为5 µm、沿<110>方向取向的CaSi2纳米 whiskers。在类似条件下，对形成的薄膜进行电子辐照会导致CaSi2晶体均匀成核，并作为CaF2薄膜中的夹杂物增殖。结果表明，这两种方法都会在10 nm厚的CaF2层的辐照区域形成3R多晶型的CaSi2晶体。