Roslyakov Ilya V, Sotnichuk Stepan V, Kushnir Sergey E, Trusov Lev A, Bozhev Ivan V, Napolskii Kirill S
Department of Materials Science, Lomonosov Moscow State University, 119991 Moscow, Russia.
Kurnakov Institute of General and Inorganic Chemistry RAS, 119991 Moscow, Russia.
Nanomaterials (Basel). 2022 Apr 20;12(9):1417. doi: 10.3390/nano12091417.
Anodization of aluminum with a pre-patterned surface is a promising approach for preparing anodic aluminum oxide (AAO) films with defect-free pore arrangement. Although pronounced effects of crystallographic orientation of Al on the AAO structure have been demonstrated, all current studies on the anodization of pre-patterned aluminum consider the substrate as an isotropic medium and, thus, do not consider the azimuthal orientation of the pattern relative to the basis vectors of the Al unit cell. Here, we investigate the interplay between the azimuthal alignment of the pore nuclei array and the crystallographic orientation of aluminum. Al(100) and Al(111) single-crystal substrates were pre-patterned by a Ga focused ion beam and then anodized under self-ordering conditions. The thickness-dependent degree of pore ordering in AAO was quantified using statistical analysis of scanning electron microscopy images. The observed trends demonstrate that the preferred azimuthal orientation of pore nuclei rows coincides with the <110> directions in the Al unit cell, which is favorable for creating AAO with a high degree of pore ordering. In the case of an unspecified azimuthal orientation of the pore nuclei array, crystallography-affected disorder within the AAO structure occurs with increasing film thickness. Our findings have important implications for preparing defect-free porous films over 100 µm in thickness that are crucial for a variety of AAO applications, e.g., creating metamaterials and 2D/3D photonic crystals.
对具有预图案化表面的铝进行阳极氧化是制备具有无缺陷孔排列的阳极氧化铝(AAO)膜的一种有前景的方法。尽管已经证明了铝的晶体取向对AAO结构有显著影响,但目前所有关于预图案化铝阳极氧化的研究都将基板视为各向同性介质,因此没有考虑图案相对于铝晶胞基矢的方位取向。在此,我们研究了孔核阵列的方位排列与铝的晶体取向之间的相互作用。通过Ga聚焦离子束对Al(100)和Al(111)单晶基板进行预图案化,然后在自有序条件下进行阳极氧化。使用扫描电子显微镜图像的统计分析对AAO中与厚度相关的孔有序度进行了量化。观察到的趋势表明,孔核行的优选方位取向与铝晶胞中的<110>方向一致,这有利于制备具有高度孔有序度的AAO。在孔核阵列方位取向未指定的情况下,随着膜厚度的增加,AAO结构中会出现受晶体学影响的无序。我们的研究结果对于制备厚度超过100 µm的无缺陷多孔膜具有重要意义,这对于各种AAO应用至关重要,例如制造超材料和二维/三维光子晶体。