Ariyarathna Isuru R, Duan Chenru, Kulik Heather J
Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA.
J Chem Phys. 2022 May 14;156(18):184113. doi: 10.1063/5.0090128.
Knowledge of the chemical bonding of HfO and HfB ground and low-lying electronic states provides essential insights into a range of catalysts and materials that contain Hf-O or Hf-B moieties. Here, we carry out high-level multi-reference configuration interaction theory and coupled cluster quantum chemical calculations on these systems. We compute full potential energy curves, excitation energies, ionization energies, electronic configurations, and spectroscopic parameters with large quadruple-ζ and quintuple-ζ quality correlation consistent basis sets. We also investigate equilibrium chemical bonding patterns and effects of correlating core electrons on property predictions. Differences in the ground state electron configuration of HfB(XΣ) and HfO(XΣ) lead to a significantly stronger bond in HfO than HfB, as judged by both dissociation energies and equilibrium bond distances. We extend our analysis to the chemical bonding patterns of the isovalent HfX (X = O, S, Se, Te, and Po) series and observe similar trends. We also note a linear trend between the decreasing value of the dissociation energy (D) from HfO to HfPo and the singlet-triplet energy gap (ΔE) of the molecule. Finally, we compare these benchmark results to those obtained using density functional theory (DFT) with 23 exchange-correlation functionals spanning multiple rungs of "Jacob's ladder." When comparing DFT errors to coupled cluster reference values on dissociation energies, excitation energies, and ionization energies of HfB and HfO, we observe semi-local generalized gradient approximations to significantly outperform more complex and high-cost functionals.
了解HfO和HfB基态及低激发态的化学键,对于深入理解一系列含有Hf - O或Hf - B部分的催化剂和材料至关重要。在此,我们对这些体系进行了高水平的多参考组态相互作用理论和耦合簇量子化学计算。我们使用具有大四重ζ和五重ζ质量相关一致基组来计算完整的势能曲线、激发能、电离能、电子构型和光谱参数。我们还研究了平衡化学键模式以及关联核心电子对性质预测的影响。从解离能和平衡键长判断,HfB(XΣ)和HfO(XΣ)基态电子构型的差异导致HfO中的键比HfB中的键明显更强。我们将分析扩展到等电子的HfX(X = O、S、Se、Te和Po)系列的化学键模式,并观察到类似趋势。我们还注意到从HfO到HfPo解离能(D)的降低值与分子的单重态 - 三重态能隙(ΔE)之间存在线性趋势。最后,我们将这些基准结果与使用密度泛函理论(DFT)并采用跨越“雅各布天梯”多个梯级的23种交换相关泛函所获得的结果进行比较。在比较DFT误差与耦合簇参考值在HfB和HfO的解离能、激发能和电离能上的差异时,我们观察到半局域广义梯度近似明显优于更复杂且成本更高的泛函。