Liu Jun, Xiong Xin, Li Han, Huang Xiangchen, Wang Yajun, Sheng Yifa, Liang Zhihao, Yao Rihui, Ning Honglong, Wei Xiaoqin
School of Electrical Engineering, University of South China, Hengyang 421001, China.
Guangdong Basic Research Center of Excellence for Energy & Information Polymer Materials, State Key Laboratory of Luminescent Materials and Devices, School of Materials Sciences and Engineering, South China University of Technology, Guangzhou 510640, China.
Micromachines (Basel). 2024 Nov 30;15(12):1465. doi: 10.3390/mi15121465.
High-k metal oxides are gradually replacing the traditional SiO dielectric layer in the new generation of electronic devices. In this paper, we report the production of five-element high entropy metal oxides (HEMOs) dielectric films by solution method and analyzed the role of each metal oxide in the system by characterizing the film properties. On this basis, we found optimal combination of (AlGaTiYZr)O with the best dielectric properties, exhibiting a low leakage current of 1.2 × 10 A/cm @1 MV/cm and a high dielectric constant, while the film's visible transmittance is more than 90%. Based on the results of factor analysis, we increased the dielectric constant up to 52.74 by increasing the proportion of TiO in the HEMOs and maintained a large optical bandgap (>5 eV). We prepared thin film transistors (TFTs) based on an (AlGaTiYZr)O dielectric layer and an InGaZnO (IGZO) active layer, and the devices exhibit a mobility of 18.2 cm/Vs, a threshold voltage (V) of -0.203 V, and an subthreshold swing (SS) of 0.288 V/dec, along with a minimal hysteresis, which suggests a good prospect of applying HEMOs to TFTs. It can be seen that the HEMOs dielectric films prepared based on the solution method can combine the advantages of various high-k dielectrics to obtain better film properties. Moreover, HEMOs dielectric films have the advantages of simple processing, low-temperature preparation, and low cost, which are expected to be widely used as dielectric layers in new flexible, transparent, and high-performance electronic devices in the future.
高k金属氧化物正在逐渐取代新一代电子器件中的传统SiO介电层。在本文中，我们报道了通过溶液法制备的五元高熵金属氧化物（HEMOs）介电薄膜，并通过表征薄膜性能分析了体系中每种金属氧化物的作用。在此基础上，我们找到了具有最佳介电性能的(AlGaTiYZr)O的最佳组合，在1 MV/cm下表现出1.2×10 A/cm的低漏电流和高介电常数，同时薄膜的可见光透过率超过90%。基于因子分析的结果，我们通过增加HEMOs中TiO的比例将介电常数提高到52.74，并保持了较大的光学带隙（>5 eV）。我们制备了基于(AlGaTiYZr)O介电层和InGaZnO（IGZO）有源层的薄膜晶体管（TFT），器件表现出18.2 cm/Vs的迁移率、-0.203 V的阈值电压（V）和0.288 V/dec的亚阈值摆幅（SS），以及最小的滞后现象，这表明将HEMOs应用于TFT具有良好的前景。可以看出，基于溶液法制备的HEMOs介电薄膜可以结合各种高k电介质的优点，以获得更好的薄膜性能。此外，HEMOs介电薄膜具有加工简单、低温制备和低成本的优点，有望在未来广泛用作新型柔性、透明和高性能电子器件中的介电层。
