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研究微溶剂化的HO(HO) + CHCHX(X = Cl、Br、I)反应中相互竞争的E2和S2机制。

Investigating the competing E2 and S2 mechanisms for the microsolvated HO(HO) + CHCHX (X = Cl, Br, I) reactions.

作者信息

Wu Xiangyu, Zhang Shaowen, Xie Jing

机构信息

Key Laboratory of Cluster Science of Ministry of Education, School of Chemistry and Chemical Engineering, Beijing Institute of Technology, Beijing 100081, China.

出版信息

Phys Chem Chem Phys. 2022 Jun 1;24(21):12993-13005. doi: 10.1039/d1cp04010c.

Abstract

We characterized the anti-E2, syn-E2, inv-S2, and ret-S2 reaction channels for the reaction of microsolvated HO(HO) anions with CHCHX (X = Cl, Br, I), using the CCSD(T)/PP/t//MP2/ECP/d level method, to understand how a solvent influences the competing E2 and S2 reactions. The calculated sequence of barrier for the four channels is ret-S2 > syn-E2 > anti-E2 > inv-S2. The barrier heights increase with incremental hydration as the system transfers from the gas phase to microsolvation, and to bulk solvation (using the PCM implicit solvent model). As the degree of hydration increases, good correlations have been found between barrier heights and several thermodynamic, geometric and charge parameters, including the reaction enthalpy, proton/ethyl-cation affinity of the hydrated nucleophile, geometric looseness (%L) and asymmetry (%AS) and charge asymmetry (Δ(X-O)) of the transition structures. Under a molecular orbital scheme, the HOMOs of nucleophiles are stabilized by stepwise hydration, explaining the rise in the barriers. Considering the effect of the leaving group, the barrier heights exhibit linear correlation with the halogen electronegativity and H-acidity of substrate CHCHX. In terms of E2/S2 competition, the barrier difference, , first increases then decreases as the number of explicit water molecules increases, under both microsolvation and bulk solvation conditions, but the inv-S2 pathway is always favored over the anti-E2 pathway. Energy decomposition analysis attributes the increase of barrier difference to the greater geometric distortion in the anti-E2 transition structure.

摘要

我们使用CCSD(T)/PP/t//MP2/ECP/d水平方法,对微溶剂化的HO(HO)阴离子与CHCHX(X = Cl、Br、I)反应的反式-E2、顺式-E2、内消旋-S2和外消旋-S2反应通道进行了表征,以了解溶剂如何影响竞争性的E2和S2反应。计算得出的四个通道的势垒顺序为外消旋-S2 > 顺式-E2 > 反式-E2 > 内消旋-S2。随着体系从气相转变为微溶剂化再到本体溶剂化(使用PCM隐式溶剂模型),势垒高度随着水化程度的增加而升高。随着水化程度的增加,已发现势垒高度与几个热力学、几何和电荷参数之间存在良好的相关性,这些参数包括反应焓、水合亲核试剂的质子/乙基阳离子亲和力、几何松散度(%L)、不对称度(%AS)以及过渡结构的电荷不对称度(Δ(X-O))。在分子轨道方案下,亲核试剂的最高占据分子轨道(HOMO)通过逐步水化而稳定,这解释了势垒的升高。考虑离去基团的影响,势垒高度与底物CHCHX的卤素电负性和H酸度呈线性相关。就E2/S2竞争而言,在微溶剂化和本体溶剂化条件下,随着明确水分子数量的增加,势垒差首先增大然后减小,但内消旋-S2途径总是比反式-E2途径更有利。能量分解分析将势垒差的增加归因于反式-E2过渡结构中更大的几何畸变。

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