Pasadas Francisco, Feijoo Pedro C, Mavredakis Nikolaos, Pacheco-Sanchez Aníbal, Chaves Ferney A, Jiménez David
Departament d'Enginyeria Electrònica, Escola d'Enginyeria, Universitat Autònoma de Barcelona, Bellaterra, 08193, Spain.
Departamento de Electrónica y Tecnología de Computadores, Universidad de Granada, Granada, 18071, Spain.
Adv Mater. 2022 Dec;34(48):e2201691. doi: 10.1002/adma.202201691. Epub 2022 Nov 7.
The progress made toward the definition of a modular compact modeling technology for graphene field-effect transistors (GFETs) that enables the electrical analysis of arbitrary GFET-based integrated circuits is reported. A set of primary models embracing the main physical principles defines the ideal GFET response under DC, transient (time domain), AC (frequency domain), and noise (frequency domain) analysis. Another set of secondary models accounts for the GFET non-idealities, such as extrinsic-, short-channel-, trapping/detrapping-, self-heating-, and non-quasi static-effects, which can have a significant impact under static and/or dynamic operation. At both device and circuit levels, significant consistency is demonstrated between the simulation output and experimental data for relevant operating conditions. Additionally, a perspective of the challenges during the scale up of the GFET modeling technology toward higher technology readiness levels while drawing a collaborative scenario among fabrication technology groups, modeling groups, and circuit designers, is provided.
本文报道了在定义用于石墨烯场效应晶体管（GFET）的模块化紧凑建模技术方面取得的进展，该技术能够对基于任意GFET的集成电路进行电学分析。一组包含主要物理原理的基本模型定义了在直流、瞬态（时域）、交流（频域）和噪声（频域）分析下理想GFET的响应。另一组次要模型考虑了GFET的非理想特性，如外部、短沟道、俘获/去俘获、自热和非准静态效应，这些效应在静态和/或动态操作下可能会产生重大影响。在器件和电路层面，均证明了在相关工作条件下模拟输出与实验数据之间具有显著的一致性。此外，本文还展望了在将GFET建模技术提升至更高技术成熟度水平过程中所面临的挑战，同时描绘了制造技术团队、建模团队和电路设计师之间的协作场景。
