Pardo M C, Pasadas F, Medina-Rull A, Palomo M G, Ortiz-Ruiz S, Marin E G, Godoy A, Ruiz F G
Pervasive Electronics Advanced Research Laboratory (PEARL), Departamento de Electrónica y Tecnología de Computadores, Universidad de Granada, 18071, Granada, Spain.
Discov Nano. 2025 Mar 14;20(1):52. doi: 10.1186/s11671-025-04221-x.
Ambipolar conductance in graphene field-effect transistors (GFETs), and in particular their quasi-quadratic I-V transfer characteristic, makes these devices excellent candidates for exploiting subharmonic mixing at high frequencies. Several realizations have already demonstrated the ability of GFETs to compete with, or even improve, state-of-the-art mixers based on traditional technologies. Nonetheless, a systematic analysis of the influence on performance of both circuit design and technological aspects has not been conducted yet. In this work, we present a comprehensive assessment of the conversion losses by means of applying radio-frequency circuit design techniques in terms of filtering and matching, along with the impact stemming from physical and geometric variations of a fabricated graphene technology.
石墨烯场效应晶体管(GFET)中的双极电导,尤其是其准二次I-V传输特性,使这些器件成为在高频下利用次谐波混频的极佳候选者。已有多项成果表明,GFET有能力与基于传统技术的先进混频器竞争,甚至有所改进。尽管如此,尚未对电路设计和技术方面对性能的影响进行系统分析。在这项工作中,我们通过应用射频电路设计技术进行滤波和匹配,以及考虑已制造的石墨烯技术的物理和几何变化所产生的影响,对变频损耗进行了全面评估。