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基于石墨烯的千兆赫兹频段亚谐波混频器的综合分析与探索性设计。

Comprehensive analysis and exploratory design of graphene-based subharmonic mixers operating at the gigahertz band.

作者信息

Pardo M C, Pasadas F, Medina-Rull A, Palomo M G, Ortiz-Ruiz S, Marin E G, Godoy A, Ruiz F G

机构信息

Pervasive Electronics Advanced Research Laboratory (PEARL), Departamento de Electrónica y Tecnología de Computadores, Universidad de Granada, 18071, Granada, Spain.

出版信息

Discov Nano. 2025 Mar 14;20(1):52. doi: 10.1186/s11671-025-04221-x.

DOI:10.1186/s11671-025-04221-x
PMID:40085295
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC11909389/
Abstract

Ambipolar conductance in graphene field-effect transistors (GFETs), and in particular their quasi-quadratic I-V transfer characteristic, makes these devices excellent candidates for exploiting subharmonic mixing at high frequencies. Several realizations have already demonstrated the ability of GFETs to compete with, or even improve, state-of-the-art mixers based on traditional technologies. Nonetheless, a systematic analysis of the influence on performance of both circuit design and technological aspects has not been conducted yet. In this work, we present a comprehensive assessment of the conversion losses by means of applying radio-frequency circuit design techniques in terms of filtering and matching, along with the impact stemming from physical and geometric variations of a fabricated graphene technology.

摘要

石墨烯场效应晶体管(GFET)中的双极电导,尤其是其准二次I-V传输特性,使这些器件成为在高频下利用次谐波混频的极佳候选者。已有多项成果表明,GFET有能力与基于传统技术的先进混频器竞争,甚至有所改进。尽管如此,尚未对电路设计和技术方面对性能的影响进行系统分析。在这项工作中,我们通过应用射频电路设计技术进行滤波和匹配,以及考虑已制造的石墨烯技术的物理和几何变化所产生的影响,对变频损耗进行了全面评估。

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https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d214/11909389/f94c0b53f5db/11671_2025_4221_Fig1_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d214/11909389/b1b27da39b0a/11671_2025_4221_Fig2_HTML.jpg
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https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d214/11909389/4953edd883e3/11671_2025_4221_Fig7_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d214/11909389/6d51ac300528/11671_2025_4221_Fig8_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d214/11909389/2dc13c40f8ec/11671_2025_4221_Fig9_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d214/11909389/dde3b56bab2b/11671_2025_4221_Fig10_HTML.jpg

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本文引用的文献

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Reconfigurable frequency multipliers based on graphene field-effect transistors.基于石墨烯场效应晶体管的可重构倍频器。
Discov Nano. 2023 Oct 5;18(1):123. doi: 10.1186/s11671-023-03884-8.
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Exploiting Ambipolarity in Graphene Field-Effect Transistors for Novel Designs on High-Frequency Analog Electronics.利用石墨烯场效应晶体管中的双极性实现高频模拟电子学的新颖设计。
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