Duan Xinlv, Lu Congyan, Chuai Xichen, Chen Qian, Yang Guanhua, Geng Di
Key Laboratory of Microelectronics Device and Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029, China.
University of Chinese Academy of Sciences, Beijing 100049, China.
Micromachines (Basel). 2022 Apr 19;13(5):652. doi: 10.3390/mi13050652.
An inter-layer dielectric (ILD) deposition process to simultaneously form the conductive regions of self-aligned (SA) coplanar In-Ga-Zn-O (IGZO) thin-film transistors (TFTs) is demonstrated. N-IGZO regions and excellent ohmic contact can be obtained without additional steps by using a magnetron sputtering process to deposit a SiO ILD. The fabricated IGZO TFTs show a subthreshold swing (SS) of 94.16 mV/decade and a linear-region field-effect mobility () of 23.06 cm/Vs. The channel-width-normalized source/drain series resistance () extracted using the transmission line method (TLM) is approximately as low as 9.4 Ω·cm. The fabricated ring oscillator (RO) with a maximum oscillation frequency of 1.75 MHz also verifies the applicability of the TFTs.
展示了一种用于同时形成自对准（SA）共面铟镓锌氧化物（IGZO）薄膜晶体管（TFT）导电区域的层间电介质（ILD）沉积工艺。通过使用磁控溅射工艺沉积SiO ILD，无需额外步骤即可获得N型IGZO区域和优异的欧姆接触。所制备的IGZO TFT的亚阈值摆幅（SS）为94.16 mV/十倍频程，线性区场效应迁移率（）为23.06 cm²/V·s。使用传输线法（TLM）提取的沟道宽度归一化源极/漏极串联电阻（）约低至9.4Ω·cm。所制备的最大振荡频率为1.75 MHz的环形振荡器（RO）也验证了TFT的适用性。
