Hu Shiben, Ning Honglong, Lu Kuankuan, Fang Zhiqiang, Li Yuzhi, Yao Rihui, Xu Miao, Wang Lei, Peng Junbiao, Lu Xubing
Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, China.
Institute for Advanced Materials, Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, South China Normal University, Guangzhou 510006, China.
Nanomaterials (Basel). 2018 Mar 27;8(4):197. doi: 10.3390/nano8040197.
In this work, we fabricated a high-mobility amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT) based on alumina oxide (Al 2 O 3 ) passivation layer (PVL) and copper (Cu) source/drain electrodes (S/D). The mechanism of the high mobility for a-IGZO TFT was proposed and experimentally demonstrated. The conductivity of the channel layer was significantly improved due to the formation of metallic In nanoparticles on the back channel during Al 2 O 3 PVL sputtering. In addition, Ar atmosphere annealing induced the Schottky contact formation between the Cu S/D and the channel layer caused by Cu diffusion. In conjunction with high conductivity channel and Schottky contact, the a-IGZO TFT based on Cu S/D and Al 2 O 3 PVL exhibited remarkable mobility of 33.5-220.1 cm 2 /Vs when channel length varies from 60 to 560 μ m. This work presents a feasible way to implement high mobility and Cu electrodes in a-IGZO TFT, simultaneously.
在本工作中，我们基于氧化铝（Al₂O₃）钝化层（PVL）和铜（Cu）源极/漏极电极（S/D）制备了一种高迁移率非晶铟镓锌氧化物（a-IGZO）薄膜晶体管（TFT）。提出并通过实验证明了a-IGZO TFT具有高迁移率的机制。在Al₂O₃ PVL溅射过程中，由于在背沟道上形成了金属铟纳米颗粒，沟道层的电导率得到了显著提高。此外，氩气气氛退火导致Cu扩散，从而在Cu S/D与沟道层之间形成了肖特基接触。结合高导电沟道和肖特基接触，当沟道长度从60μm变化到560μm时，基于Cu S/D和Al₂O₃ PVL的a-IGZO TFT表现出33.5 - 220.1 cm²/Vs的显著迁移率。这项工作提出了一种在a-IGZO TFT中同时实现高迁移率和铜电极的可行方法。
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