Zhang Lin, Cui Zhen
School of Science, Xi'an University of Technology, Xi'an 710048, China.
School of Automation and Information Engineering, Xi'an University of Technology, Xi'an 710048, China.
Nanomaterials (Basel). 2022 May 17;12(10):1712. doi: 10.3390/nano12101712.
Nine kinds of non-metal atoms adsorbed into germanium carbide (NM-GeC) systems wereare investigated by first-principles calculations. The results show that the most stable adsorption positions vary with the NM atoms, and C-GeC exhibits the strongest adsorption. The adsorption of NM atoms causes changes in the electronic, optical and magnetic properties of the GeC system. F- and Cl-GeC turn into magnetic metals, P-GeC becomes a half-metal and H- and B-GeC appear as non-magnetic metals. Although C- and O-GeC remain non-magnetic semiconductors, N-GeC presents the behaviors of a magnetic semiconductor. Work function decreases in H-, B- and N-SiC, reaching a minimum of 3.37 eV in H-GeC, which is 78.9% of the pristine GeC. In the visible light region, redshifts occur in the absorption spectrum of C-GeC , with strong absorption in the wavelength range from 400 to 600 nm. Our analysis shows that the magnetism in semiconducting NM-GeC is attributed to the spinning state of the unbonded electrons of the NM atoms. Our study demonstrates the applications of NM-GeC in spintronics, optoelectronics and photovoltaic cells, and it provides a reference for analyzing magnetism in semiconducting NM materials.
通过第一性原理计算研究了九种吸附在碳化锗(NM-GeC)体系中的非金属原子。结果表明,最稳定的吸附位置随非金属原子而变化,且C-GeC表现出最强的吸附作用。NM原子的吸附导致了GeC体系的电子、光学和磁学性质发生变化。F-GeC和Cl-GeC转变为磁性金属,P-GeC成为半金属,H-GeC和B-GeC表现为非磁性金属。尽管C-GeC和O-GeC仍为非磁性半导体,但N-GeC呈现出磁性半导体的行为。功函数在H-GeC、B-GeC和N-GeC中降低,在H-GeC中达到最小值3.37 eV,为原始GeC的78.9%。在可见光区域,C-GeC的吸收光谱发生红移,在400至600 nm波长范围内有强烈吸收。我们的分析表明,半导体NM-GeC中的磁性归因于NM原子未键合电子的自旋状态。我们的研究展示了NM-GeC在自旋电子学、光电子学和光伏电池中的应用,并为分析半导体NM材料中的磁性提供了参考。