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Optoelectronic devices: monolayer diodes light up.

作者信息

Bratschitsch Rudolf

机构信息

Institute of Physics, University of Münster, 48149 Münster, Germany.

出版信息

Nat Nanotechnol. 2014 Apr;9(4):247-8. doi: 10.1038/nnano.2014.66.

DOI:10.1038/nnano.2014.66

PMID:24694872

Abstract

摘要

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本文引用的文献

Optoelectronic devices based on electrically tunable p-n diodes in a monolayer dichalcogenide.

Nat Nanotechnol. 2014 Apr;9(4):262-7. doi: 10.1038/nnano.2014.25. Epub 2014 Mar 9.

Electrically tunable excitonic light-emitting diodes based on monolayer WSe2 p-n junctions.

Nat Nanotechnol. 2014 Apr;9(4):268-72. doi: 10.1038/nnano.2014.26. Epub 2014 Mar 9.

Solar-energy conversion and light emission in an atomic monolayer p-n diode.

Nat Nanotechnol. 2014 Apr;9(4):257-61. doi: 10.1038/nnano.2014.14. Epub 2014 Mar 9.

Emerging device applications for semiconducting two-dimensional transition metal dichalcogenides.

ACS Nano. 2014 Feb 25;8(2):1102-20. doi: 10.1021/nn500064s. Epub 2014 Jan 31.

Van der Waals heterostructures.

Nature. 2013 Jul 25;499(7459):419-25. doi: 10.1038/nature12385.

Formation of a stable p-n junction in a liquid-gated MoS2 ambipolar transistor.

Nano Lett. 2013 Jul 10;13(7):3023-8. doi: 10.1021/nl400902v. Epub 2013 Jun 28.

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相似文献

Optoelectronic devices: monolayer diodes light up.

Nat Nanotechnol. 2014 Apr;9(4):247-8. doi: 10.1038/nnano.2014.66.

Optoelectronic devices based on electrically tunable p-n diodes in a monolayer dichalcogenide.

Nat Nanotechnol. 2014 Apr;9(4):262-7. doi: 10.1038/nnano.2014.25. Epub 2014 Mar 9.

Solar-energy conversion and light emission in an atomic monolayer p-n diode.

Nat Nanotechnol. 2014 Apr;9(4):257-61. doi: 10.1038/nnano.2014.14. Epub 2014 Mar 9.

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Electrically tunable excitonic light-emitting diodes based on monolayer WSe2 p-n junctions.

Nat Nanotechnol. 2014 Apr;9(4):268-72. doi: 10.1038/nnano.2014.26. Epub 2014 Mar 9.

Light-emitting devices: turning the tables on surface plasmons.

Nat Mater. 2004 Sep;3(9):588-9. doi: 10.1038/nmat1210.

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Ann Biomed Eng. 2010 Nov;38(11):3500-8. doi: 10.1007/s10439-010-0091-6. Epub 2010 Jun 24.

Feature issue introduction: quantum dots for photonic applications.

Opt Express. 2012 May 7;20(10):10721-3. doi: 10.1364/OE.20.010721.

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Annu Rev Chem Biomol Eng. 2013;4:187-209. doi: 10.1146/annurev-chembioeng-061312-103359. Epub 2013 Mar 27.

Surface-plasmon-enhanced light emitters based on InGaN quantum wells.

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引用本文的文献

First-Principles Investigations of Two-Sided Functionalised MoS Monolayer.

Nanomaterials (Basel). 2025 Jan 26;15(3):193. doi: 10.3390/nano15030193.

Theoretical Study on Electronic, Magnetic and Optical Properties of Non-Metal Atoms Adsorbed onto Germanium Carbide.

Nanomaterials (Basel). 2022 May 17;12(10):1712. doi: 10.3390/nano12101712.

Electronic, Magnetic, and Optical Performances of Non-Metals Doped Silicon Carbide.

Front Chem. 2022 Apr 19;10:898174. doi: 10.3389/fchem.2022.898174. eCollection 2022.

本文引用的文献

Optoelectronic devices based on electrically tunable p-n diodes in a monolayer dichalcogenide.

Nat Nanotechnol. 2014 Apr;9(4):262-7. doi: 10.1038/nnano.2014.25. Epub 2014 Mar 9.

Electrically tunable excitonic light-emitting diodes based on monolayer WSe2 p-n junctions.

Nat Nanotechnol. 2014 Apr;9(4):268-72. doi: 10.1038/nnano.2014.26. Epub 2014 Mar 9.

Solar-energy conversion and light emission in an atomic monolayer p-n diode.

Nat Nanotechnol. 2014 Apr;9(4):257-61. doi: 10.1038/nnano.2014.14. Epub 2014 Mar 9.

Emerging device applications for semiconducting two-dimensional transition metal dichalcogenides.

ACS Nano. 2014 Feb 25;8(2):1102-20. doi: 10.1021/nn500064s. Epub 2014 Jan 31.

Van der Waals heterostructures.

Nature. 2013 Jul 25;499(7459):419-25. doi: 10.1038/nature12385.

Formation of a stable p-n junction in a liquid-gated MoS2 ambipolar transistor.

Nano Lett. 2013 Jul 10;13(7):3023-8. doi: 10.1021/nl400902v. Epub 2013 Jun 28.

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Optoelectronic devices: monolayer diodes light up.

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