Fujii Shunichi, Minami Saori, Urayama Kenji, Suenaga Yu, Naito Hiroyoshi, Miyashita Orito, Imoto Hiroaki, Naka Kensuke
Department of Physics and Electronics, Graduate School of Engineering, Osaka Prefecture University, Gakuen-cho, Naka-ku, Sakai, Osaka 599-8531, Japan.
ACS Macro Lett. 2018 Jun 19;7(6):641-645. doi: 10.1021/acsmacrolett.8b00271. Epub 2018 May 17.
Solvent-based deposition techniques for fabrication of organic field-effect transistors (OFETs) generally require orthogonal solvents for deposition of a conjugated polymer layer on a polymer gate insulator layer. Here, we found significantly reduced dissolution rate of the polymeric film in the same solvent after casting a homegeneous polymerization solution of -bis(3-aminopropyl)hexaisobutyl-substituted T cage () with terephthalaldehyde. The limited dissolution rate in the solvent provided enough chance for fabrication of a regioregular poly(3-hexylthiophene-2,5-diyl) (P3HT) layer on the present polymer films without using an orthogonal solvent. The rheological properties indicate that physical interaction between the polymer chains provides the significantly reduced dissolution rate after the deposition onto a substrate without any cross-linking treatments.
用于制造有机场效应晶体管(OFET)的基于溶剂的沉积技术通常需要使用正交溶剂,以便在聚合物栅极绝缘层上沉积共轭聚合物层。在此,我们发现,在用对苯二甲醛浇铸双(3-氨丙基)六异丁基取代的T笼()的均相聚合溶液后,聚合物薄膜在相同溶剂中的溶解速率显著降低。溶剂中有限的溶解速率为在不使用正交溶剂的情况下在当前聚合物薄膜上制造区域规整的聚(3-己基噻吩-2,5-二基)(P3HT)层提供了足够的机会。流变学性质表明,聚合物链之间的物理相互作用使得在未经任何交联处理沉积到基板上后,溶解速率显著降低。