Guo Yanping, Zhu Jichun, Kou Dongxing, Zhou Wenhui, Zhou Zhengji, Yuan Shengjie, Qi Yafang, Meng Yuena, Han Litao, Zheng Zhi, Wu Sixin
Key Lab for Special Functional Materials, Ministry of Education, National & Local Joint Engineering Research Center for High-Efficiency Display and Lighting Technology, School of Materials Science and Engineering, Collaborative Innovation Center of Nano Functional Materials and Applications, Henan University, Kaifeng 475004, China.
Miami College of Henan University, Henan University, Kaifeng 475004, China.
ACS Appl Mater Interfaces. 2022 Jun 2. doi: 10.1021/acsami.2c04027.
The kesterite CuZnSn(S,Se) (CZTSSe) solar cells have shown a continuous rise in power conversion efficiencies in the past years. However, the encountered interfacial problems with respect to charge recombination and extraction losses at the CdS/CZTSSe heterojunction still hinder their further development. In this work, an additional plasmonic local electric field is imposed into the CdS/CZTSSe interface through the electrostatic assembly of a two-dimensional (2D) ordered Au@SiO NP array onto an aminosilane-modified surface absorber. The interfacial electric properties are tuned by controlling the coverage particle distance, and the finite-difference time domain (FDTD) simulation demonstrates that the strong near-field enhancement mainly occurs near the p-n junction interface. It is shown that the imposed local electric field leads to interfacial electrostatic potential () augmentation and improves the charge extraction and recombination processes. These electric benefits enable remarkable improvements in open-circuit voltage () and short-circuit current (), leading to the cell efficiency being increased from 10.19 to 11.50%. This work highlights the dramatic role of the plasmonic local electric field and the use of the 2D Au@SiO NP array to modify a surface absorber instead of the extensively used ion passivation, providing a new strategy for p-n junction engineering in kesterite photovoltaics.
在过去几年中，锡基硫属化合物CuZnSn(S,Se)（CZTSSe）太阳能电池的功率转换效率持续提高。然而，CdS/CZTSSe异质结处电荷复合和提取损失方面遇到的界面问题仍然阻碍着它们的进一步发展。在这项工作中，通过将二维（2D）有序Au@SiO纳米颗粒阵列静电组装到氨基硅烷修饰的表面吸收体上，在CdS/CZTSSe界面引入了额外的等离子体局部电场。通过控制覆盖颗粒距离来调节界面电学性质，时域有限差分（FDTD）模拟表明，强近场增强主要发生在p-n结界面附近。结果表明，施加的局部电场导致界面静电势（）增强，并改善了电荷提取和复合过程。这些电学优势使开路电压（）和短路电流（）得到显著提高，从而使电池效率从10.19%提高到11.50%。这项工作突出了等离子体局部电场的重要作用以及使用二维Au@SiO纳米颗粒阵列修饰表面吸收体，而不是广泛使用的离子钝化，为锡基硫属化合物光伏中的p-n结工程提供了一种新策略。
