Joo Yongho, Brady Gerald J, Arnold Michael S, Gopalan Padma
Department of Materials Science and Engineering, University of Wisconsin , Madison, Wisconsin 53706, United States.
Langmuir. 2014 Apr 1;30(12):3460-6. doi: 10.1021/la500162x. Epub 2014 Mar 18.
Arrays of aligned semiconducting single-walled carbon nanotubes (s-SWCNTs) with exceptional electronic-type purity were deposited at high deposition velocity of 5 mm min(-1) by a novel "dose-controlled, floating evaporative self-assembly" process with excellent control over the placement of stripes and quantity of s-SWCNTs deposited. This approach uses the diffusion of organic solvent on the water-air interface to deposit aligned s-SWCNT (99.9%) tubes on a partially submerged hydrophobic substrate, which is withdrawn vertically from the surface of water. By decoupling the s-SWCNT stripe formation from the evaporation of the bulk solution and by iteratively applying the s-SWCNTs in controlled "doses", we show through polarized Raman studies that the s-SWCNTs are aligned within ±14°, are packed at a density of ∼50 s-SWCNTs μm(-1), and constitute primarily a well-ordered monodispersed layer. The resulting field-effect transistor devices show high performance with a mobility of 38 cm(2) V(-1) s(-1) and on/off ratio of 2.2 × 10(6) at 9 μm channel length.
通过一种新型的“剂量控制、浮动蒸发自组装”工艺,以5毫米每分钟的高沉积速度沉积了具有优异电子类型纯度的对齐半导体单壁碳纳米管(s-SWCNTs)阵列,该工艺能够出色地控制条纹的位置和沉积的s-SWCNTs数量。这种方法利用有机溶剂在水-空气界面上的扩散,将对齐的s-SWCNT(99.9%)管沉积在部分浸没的疏水基底上,该基底从水面垂直抽出。通过将s-SWCNT条纹的形成与本体溶液的蒸发解耦,并通过以受控的“剂量”迭代施加s-SWCNTs,我们通过偏振拉曼研究表明,s-SWCNTs的排列角度在±14°以内,密度约为50根s-SWCNTs每微米,并且主要构成一个有序的单分散层。由此制成的场效应晶体管器件表现出高性能,在9微米沟道长度下迁移率为38平方厘米每伏每秒,开/关比为2.2×10⁶ 。