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通过氢键连接空穴传输层和垂直取向准二维钙钛矿的胺基端碳点实现高效发光二极管。

Amine-Terminated Carbon Dots Linking Hole Transport Layer and Vertically Oriented Quasi-2D Perovskites through Hydrogen Bonds Enable Efficient LEDs.

作者信息

Dong Wei, Zhang Xiaoyu, Yang Fan, Zeng Qingsen, Yin Wenxu, Zhang Wei, Wang Haoran, Yang Xuyong, Kershaw Stephen V, Yang Bai, Rogach Andrey L, Zheng Weitao

机构信息

Key Laboratory of Automobile Materials, Ministry of Education, College of Materials Science and Engineering, Jilin Provincial International Cooperation Key Laboratory of High-Efficiency Clean Energy Materials, Electron Microscopy Center, Jilin University, Changchun 130012, People's Republic of China.

State Key Laboratory of Supramolecular Structure and Materials, College of Chemistry, Jilin University, Changchun 130012, People's Republic of China.

出版信息

ACS Nano. 2022 Jun 28;16(6):9679-9690. doi: 10.1021/acsnano.2c03064. Epub 2022 Jun 5.

Abstract

Close attention to the interfaces of solution-processed metal halide perovskite-based light-emitting devices (LEDs) is crucial for their optimal performance. Solution processing of these devices typically leads to the formation of van der Waals interfaces with a weak connection between different functional layers, leaving great room for improvement in charge transport through strengthening of the interlayer interaction. Here, we have realized a hydrogen-bond-assisted interface that makes use of ultrasmall amine-terminated carbon dots to enhance the interaction between the hole transport layer made of PEDOT:PSS and the hybrid lead bromide perovskite emitting layer, which not only promotes the hole injection efficiency but also orients the quasi-2D perovskite crystals penetrating the vertical direction of the device without any, or very few, horizontal grain boundaries, which has a profound effect on the photophysical and transport properties of the emitting layer. As a result, LEDs based on quasi-2D perovskites show up to 24.5% external quantum efficiency, 80 000 cd m brightness, and over 5-fold extended longevity.

摘要

密切关注溶液处理的金属卤化物钙钛矿基发光器件(LED)的界面对于其最佳性能至关重要。这些器件的溶液处理通常会导致范德华界面的形成,不同功能层之间的连接较弱,通过加强层间相互作用,在电荷传输方面有很大的改进空间。在此,我们实现了一种氢键辅助界面,利用超小胺基封端的碳点增强由PEDOT:PSS制成的空穴传输层与混合溴化铅钙钛矿发光层之间的相互作用,这不仅提高了空穴注入效率,还使准二维钙钛矿晶体在器件垂直方向上生长且没有任何或极少水平晶界,这对发光层的光物理和传输性质有深远影响。结果,基于准二维钙钛矿的LED显示出高达24.5%的外量子效率、80000 cd/m²的亮度以及超过5倍的寿命延长。

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