Lee Bo Ram, Yu Jae Choul, Park Jong Hyun, Lee Seungjin, Mai Cheng-Kang, Zhao Baodan, Wong Matthew S, Jung Eui Dae, Nam Yun Seok, Park Song Yi, Di Nuzzo Daniele, Kim Jin Young, Stranks Samuel D, Bazan Guillermo C, Choi Hyosung, Song Myoung Hoon, Friend Richard H
Department of Physics , Pukyong National University , 45 Yongso-ro , Nam-Gu, Busan 48513 , Republic of Korea.
Cavendish Laboratory , University of Cambridge , JJ Thomson Avenue , Cambridge , CB3 0HE , U.K.
ACS Nano. 2018 Jun 26;12(6):5826-5833. doi: 10.1021/acsnano.8b01715. Epub 2018 May 29.
Perovskite-based optoelectronic devices have been rapidly developing in the past 5 years. Since the first report, the external quantum efficiency (EQE) of perovskite light-emitting diodes (PeLEDs) has increased rapidly through the control of morphology and structure from 0.1% to more than 11%. Here, we report the use of various conjugated polyelectrolytes (CPEs) as the hole injection layer in PeLEDs. In particular, we find that poly[2,6-(4,4-bis-potassium butanylsulfonate)-4 H-cyclopenta-[2,1- b;3,4- b']-dithiophene)] (PCPDT-K) transfers holes effectively, blocks electron transport from the perovskite to the underlying ITO layer, and reduces luminescence quenching at the perovskite/PCPDT-K interface. Our optimized PeLEDs with PCPDT-K show enhanced EQE by a factor of approximately 4 compared to control PeLEDs with PEDOT:PSS, reaching EQE values of 5.66%, and exhibit improved device stability.
基于钙钛矿的光电器件在过去五年中得到了迅速发展。自首次报道以来，通过对形貌和结构的控制，钙钛矿发光二极管（PeLEDs）的外量子效率（EQE）已从0.1%迅速提高到11%以上。在此，我们报道了使用各种共轭聚电解质（CPEs）作为PeLEDs中的空穴注入层。特别是，我们发现聚[2,6-(4,4-双钾丁烷磺酸盐)-4H-环戊并-[2,1-b;3,4-b']-二噻吩]（PCPDT-K）能有效地传输空穴，阻止电子从钙钛矿传输到下面的ITO层，并减少钙钛矿/PCPDT-K界面处的发光猝灭。与使用PEDOT:PSS的对照PeLEDs相比，我们优化后的带有PCPDT-K的PeLEDs的EQE提高了约4倍，达到5.66%，并且器件稳定性得到了改善。
