Sun Tangyou, Shui Furong, Yang Xiancui, Zhou Zhiping, Wan Rongqiao, Liu Yun, Qian Cheng, Xu Zhimou, Li Haiou, Guo Wenjing
Guangxi Key Laboratory of Precision Navigation Technology and Application, Guilin University of Electronic Technology, Guilin 541004, China.
State Key Laboratory of Advanced Optical Communication Systems and Networks, School of Electronics Engineering and Computer Science, Peking University, Beijing 100091, China.
Nanomaterials (Basel). 2022 May 30;12(11):1875. doi: 10.3390/nano12111875.
Surface anti-reflection (AR) with nanometer-scaled texture has shown excellent light trapping performance involving optical devices. In this work, we developed a simple and lithography-free structure replication process to obtain large scale surface cup-shaped nano-pillar (CSNP) arrays for the first time. A method of depositing was used for pattern transfer based on PMMA pre-coated through-hole anodic aluminum oxide (AAO) thin film (500 nm), and eventually, the uniformity of the transferred nanostructures was guaranteed. From the spectrum (250 nm2000 nm) dependent measurements, the CSNP nanostructured Si showed excellent AR performance when compared with that of the single-polished Si. Moreover, the CSNP was found to be polarization insensitive and less dependent on incidence angles (≤80°) over the whole spectrum. To further prove the excellent antireflective properties of the CSNP structure, thin film solar cell models were built and studied. The maximum value of J for CSNP solar cells shows obvious improvement comparing with that of the cylinder, cone and parabola structured ones. Specifically, in comparison with the optimized SiN thin film solar cell, an increment of 54.64% has been achieved for the CSNP thin film solar cell.
具有纳米级纹理的表面抗反射(AR)在光学器件中展现出了出色的光捕获性能。在这项工作中,我们首次开发了一种简单且无需光刻的结构复制工艺,以获得大规模的表面杯形纳米柱(CSNP)阵列。基于预涂有聚甲基丙烯酸甲酯(PMMA)的通孔阳极氧化铝(AAO)薄膜(约500纳米),采用一种沉积方法进行图案转移,最终确保了转移纳米结构的均匀性。通过依赖光谱(250纳米至2000纳米)的测量发现,与单面抛光硅相比,具有CSNP纳米结构的硅表现出优异的抗反射性能。此外,还发现CSNP在整个光谱范围内对偏振不敏感,且对入射角(≤80°)的依赖性较小。为了进一步证明CSNP结构优异的抗反射特性,构建并研究了薄膜太阳能电池模型。与圆柱、圆锥和抛物线结构的太阳能电池相比,CSNP太阳能电池的J最大值有明显提高。具体而言,与优化后的氮化硅薄膜太阳能电池相比,CSNP薄膜太阳能电池实现了54.64%的增量。