Zhu Houjuan, Zan Wenyan, Chen Wanli, Jiang Wenbin, Ding Xianguang, Li Bang Lin, Mu Yuewen, Wang Lei, Garaj Slaven, Leong David Tai
Department of Chemical and Biomolecular Engineering, National University of Singapore, 4 Engineering Drive 4, Singapore, 117585, Singapore.
Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology and Research), 2 Fusionopolis Way, Innovis, Singapore, 138634, Singapore.
Adv Mater. 2022 Aug;34(31):e2200004. doi: 10.1002/adma.202200004. Epub 2022 Jul 3.
Transition metal dichalcogenide (TMD) quantum dots (QDs) with defects have attracted interesting chemistry due to the contribution of vacancies to their unique optical, physical, catalytic, and electrical properties. Engineering defined defects into molybdenum sulfide (MoS ) QDs is challenging. Herein, by applying a mild biomineralization-assisted bottom-up strategy, blue photoluminescent MoS QDs (B-QDs) with a high density of defects are fabricated. The two-stage synthesis begins with a bottom-up synthesis of original MoS QDs (O-QDs) through chemical reactions of Mo and sulfide ions, followed by alkaline etching that creates high sulfur-vacancy defects to eventually form B-QDs. Alkaline etching significantly increases the photoluminescence (PL) and photo-oxidation. An increase in defect density is shown to bring about increased active sites and decreased bandgap energy; which is further validated with density functional theory calculations. There is strengthened binding affinity between QDs and O due to lower gap energy (∆E ) between S and T , accompanied with improved intersystem crossing (ISC) efficiency. Lowered gap energy contributes to assist e -h pair formation and the strengthened binding affinity between QDs and O . Defect engineering unravels another dimension of material properties control and can bring fresh new applications to otherwise well characterized TMD nanomaterials.
具有缺陷的过渡金属二硫属化物(TMD)量子点(QDs)因其空位对其独特的光学、物理、催化和电学性质的贡献而吸引了人们的关注。在硫化钼(MoS )量子点中设计特定的缺陷具有挑战性。在此,通过应用温和的生物矿化辅助自下而上策略,制备了具有高密度缺陷的蓝色光致发光MoS量子点(B-QDs)。两阶段合成首先通过钼和硫离子的化学反应自下而上合成原始MoS量子点(O-QDs),然后进行碱性蚀刻,产生高硫空位缺陷,最终形成B-QDs。碱性蚀刻显著提高了光致发光(PL)和光氧化性能。缺陷密度的增加导致活性位点增加和带隙能量降低;密度泛函理论计算进一步验证了这一点。由于S和T 之间的能隙(∆E )较低,量子点与O 之间的结合亲和力增强,同时系间窜越(ISC)效率提高。降低的能隙有助于促进电子-空穴对的形成以及量子点与O 之间增强的结合亲和力。缺陷工程揭示了材料性能控制的另一个维度,并可为原本已得到充分表征的TMD纳米材料带来新的应用。