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全无机柔性反铁电-绝缘体多层薄膜的高储能性能

High Energy Storage Performance of All-Inorganic Flexible Antiferroelectric-Insulator Multilayered Thin Films.

作者信息

Yin Chao, Zhang Tiandong, Shi Zhuangzhuang, Zhang Changhai, Feng Yu, Chi Qingguo

机构信息

Key Laboratory of Engineering Dielectrics and Its Application, Ministry of Education, Harbin University of Science and Technology, Harbin 150080, P. R. China.

School of Electrical and Electronic Engineering, Harbin University of Science and Technology, Harbin 150080, P. R. China.

出版信息

ACS Appl Mater Interfaces. 2022 Jun 29;14(25):28997-29006. doi: 10.1021/acsami.2c05455. Epub 2022 Jun 16.

DOI:10.1021/acsami.2c05455
PMID:35709552
Abstract

With the increasingly high requirements for wearable and flexible devices, traditional inorganic capacitors cannot meet the flexible demand of next-generation electronic devices. In this work, the energy storage property of all-inorganic flexible films has been systematically studied. PbZrO (PZO) and AlO (AO) are selected as the antiferroelectric layer and insulating layer, respectively. The heterostructured films are prepared on the fluorphlogopite (F-Mica) substrate by chemical solution deposition. The microstructure, polarization behavior, and energy storage performances are investigated. The results demonstrate that the AO/PZO/AO/PZO/AO (APAPA) multilayered thin film possesses a greatly improved energy storage density () of 28.1 J/cm with an excellent energy storage efficiency (η) of 80.1%, which is ascribed to the enhanced breakdown strength and large difference in polarization. Furthermore, the capacitive films exhibit good stability under a wide working temperature range of 25-140 °C and an electric fatigue endurance of 10 cycles. Besides, the energy storage performances are almost unchanged after 10 bending cycles, demonstrating an excellent mechanical bending endurance. This work sheds light on the preparation technology and improvement of the dielectric energy storage performance for all-inorganic flexible multilayered thin films.

摘要

随着对可穿戴和柔性设备的要求越来越高,传统的无机电容器无法满足下一代电子设备的柔性需求。在这项工作中,对全无机柔性薄膜的储能特性进行了系统研究。分别选择PbZrO(PZO)和AlO(AO)作为反铁电层和绝缘层。通过化学溶液沉积在氟金云母(F-云母)衬底上制备了异质结构薄膜。研究了其微观结构、极化行为和储能性能。结果表明,AO/PZO/AO/PZO/AO(APAPA)多层薄膜具有大幅提高的储能密度()28.1 J/cm,储能效率(η)高达80.1%,这归因于击穿强度的提高和极化的巨大差异。此外,电容薄膜在25-140°C的宽工作温度范围内表现出良好的稳定性,电疲劳耐久性为10次循环。此外,经过10次弯曲循环后,储能性能几乎不变,显示出优异的机械弯曲耐久性。这项工作为全无机柔性多层薄膜的制备技术和介电储能性能的改进提供了思路。

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