Guo Jianzeng, Yin Chao, Zhang Xue, Chi Qingguo
School of Electrical and Electronic Engineering, Harbin University of Science and Technology, Harbin 150080, China.
Key Laboratory of Engineering Dielectrics and Its Application, Ministry of Education, Harbin University of Science and Technology, Harbin 150080, China.
Materials (Basel). 2025 May 19;18(10):2353. doi: 10.3390/ma18102353.
Flexible thin-film capacitors have gained a lot of attention in energy storage applications because of their high energy storage densities and efficient charge-discharge performances. Among these materials, antiferroelectric compounds with low residual polarization and strong saturation polarization have shown great promise. However, their comparatively low breakdown strength continues to be a major issue restricting further developments in their energy storage performance. While La doping has been explored as a means to enhance the energy storage capabilities of antiferroelectric thin films, the specific influence of La on breakdown strength and the underlying mechanism of phase transitions have not been thoroughly investigated in existing research. In this study, PbLaZrO thin films were successfully synthesized and deposited on mica substrates via the sol-gel process. By varying the concentration of La ions, a detailed examination of the films' microstructures, electrical properties, and energy storage performances was carried out to better understand how La doping influences both breakdown strength and energy storage characteristics. The results show that doping with La significantly improves the breakdown strength of the films, reduces the critical phase transition electric field (-), and enhances their energy storage capabilities. Notably, the PbLaZrO thin film achieved an impressive energy storage density of 34.9 J/cm with an efficiency of 58.3%, and at the maximum electric field strength of 1541 kV/cm, the recoverable energy density () was 385% greater than that of the PbZrO film. Additionally, the film still maintains good energy storage performance after 10 cycles and 10 bending cycles. These findings highlight the potential of flexible antiferroelectric PbLaZrO thin films for future energy storage applications.
柔性薄膜电容器因其高储能密度和高效的充放电性能在储能应用中受到了广泛关注。在这些材料中，具有低剩余极化和高饱和极化的反铁电化合物显示出了巨大的潜力。然而，它们相对较低的击穿强度仍然是限制其储能性能进一步发展的主要问题。虽然已经探索了用镧掺杂来提高反铁电薄膜的储能能力，但在现有研究中，镧对击穿强度的具体影响以及相变的潜在机制尚未得到充分研究。在本研究中，通过溶胶 - 凝胶法成功地在云母衬底上合成并沉积了PbLaZrO薄膜。通过改变镧离子的浓度，对薄膜的微观结构、电学性能和储能性能进行了详细研究，以更好地理解镧掺杂如何影响击穿强度和储能特性。结果表明，镧掺杂显著提高了薄膜的击穿强度，降低了临界相变电场（-），并增强了它们的储能能力。值得注意的是，PbLaZrO薄膜实现了令人印象深刻的34.9 J/cm的储能密度，效率为58.3%，在最大电场强度为1541 kV/cm时，可回收能量密度（）比PbZrO薄膜高385%。此外，该薄膜在10次循环和10次弯曲循环后仍保持良好的储能性能。这些发现突出了柔性反铁电PbLaZrO薄膜在未来储能应用中的潜力。
