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二硫化钼单层与荧光分子聚集体异质界面处的激子转移

Exciton Transfer at Heterointerfaces of MoS Monolayers and Fluorescent Molecular Aggregates.

作者信息

Kwon Soyeong, Jeong Dong Yeun, Hong Chengyun, Oh Saejin, Song Jungeun, Choi Soo Ho, Kim Ki Kang, Yoon Seokhyun, Choi Taeyoung, Yee Ki-Ju, Kim Ji-Hee, You Youngmin, Kim Dong-Wook

机构信息

Department of Physics, Ewha Womans University, Seoul, 03760, Korea.

Division of Chemical Engineering and Materials Science, and Graduate Program for System Health Science and Engineering, Ewha Womans University, Seoul, 03760, Korea.

出版信息

Adv Sci (Weinh). 2022 Aug;9(23):e2201875. doi: 10.1002/advs.202201875. Epub 2022 Jun 16.

DOI:10.1002/advs.202201875
PMID:35712754
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC9376849/
Abstract

Integration of distinct materials to form heterostructures enables the proposal of new functional devices based on emergent physical phenomena beyond the properties of the constituent materials. The optical responses and electrical transport characteristics of heterostructures depend on the charge and exciton transfer (CT and ET) at the interfaces, determined by the interfacial energy level alignment. In this work, heterostructures consisting of aggregates of fluorescent molecules (DY1) and 2D semiconductor MoS monolayers are fabricated. Photoluminescence spectra of DY1/MoS show quenching of the DY1 emission and enhancement of the MoS emission, indicating a strong electronic interaction between these two materials. Nanoscopic mappings of the light-induced contact potential difference changes rule out the CT process at the interface. Using femtosecond transient absorption spectroscopy, the rapid interfacial ET process from DY1 aggregates to MoS and a fourfold extension of the exciton lifetime in MoS are elucidated. These results suggest that the integration of 2D inorganic semiconductors with fluorescent molecules can provide versatile approaches to engineer the physical characteristics of materials for both fundamental studies and novel optoelectronic device applications.

摘要

将不同材料整合形成异质结构,能够基于构成材料特性之外的新兴物理现象提出新型功能器件。异质结构的光学响应和电输运特性取决于界面处的电荷和激子转移(CT和ET),这由界面能级排列决定。在这项工作中,制备了由荧光分子(DY1)聚集体和二维半导体MoS单层组成的异质结构。DY1/MoS的光致发光光谱显示DY1发射淬灭而MoS发射增强,表明这两种材料之间存在强电子相互作用。光诱导接触电势差变化的纳米级映射排除了界面处的CT过程。使用飞秒瞬态吸收光谱法,阐明了从DY1聚集体到MoS的快速界面ET过程以及MoS中激子寿命延长四倍的现象。这些结果表明,二维无机半导体与荧光分子的整合可为基础研究和新型光电器件应用设计材料的物理特性提供多种方法。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/fdb7/9376849/e8baf4191df0/ADVS-9-2201875-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/fdb7/9376849/2e6eecfc317e/ADVS-9-2201875-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/fdb7/9376849/9ce9825e7d40/ADVS-9-2201875-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/fdb7/9376849/a8d65064d834/ADVS-9-2201875-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/fdb7/9376849/e8baf4191df0/ADVS-9-2201875-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/fdb7/9376849/2e6eecfc317e/ADVS-9-2201875-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/fdb7/9376849/9ce9825e7d40/ADVS-9-2201875-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/fdb7/9376849/a8d65064d834/ADVS-9-2201875-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/fdb7/9376849/e8baf4191df0/ADVS-9-2201875-g001.jpg

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本文引用的文献

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Electronic structures and optical characteristics of fluorescent pyrazinoquinoxaline assemblies and Au interfaces.荧光吡嗪并喹喔啉组装体和金界面的电子结构和光学特性。
Sci Rep. 2021 Aug 20;11(1):16978. doi: 10.1038/s41598-021-96437-x.
3
Type-I Energy Level Alignment at the PTCDA-Monolayer MoS Interface Promotes Resonance Energy Transfer and Luminescence Enhancement.
PTCDA-单层MoS界面处的I型能级排列促进共振能量转移和发光增强。
Adv Sci (Weinh). 2021 May 5;8(12):2100215. doi: 10.1002/advs.202100215. eCollection 2021 Jun.
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Trion-Mediated Förster Resonance Energy Transfer and Optical Gating Effect in WS/hBN/MoSe Heterojunction.WS/hBN/MoSe异质结中的激子介导的Förster共振能量转移和光学门控效应
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